IC manufacturers GaN Systems

IC manufacturers (103)

GaN Systems GS66516T | Demoboard GS665BTP-REF

High Efficiency CCM Bridgeless Totem Pole PFC Design using GaN E-HEMT

Overview

TopologyPower Factor Correction
Input voltage176-264 V
Output 1400 V / 7.5 A
IC revision170905

Description

The designed PFC evaluation board consists of three major parts. They are the PFC controller daughter board, GS66516T half-bridge daughter board, and the mother board. The PFC control chip is the UCD3138 IC chip from Texas Instruments. The GS66516T devices from GaN Systems are chosen for the fast GaN E-HEMT [3]. The IXFH80N65X2 is chosen for the Si MOSFET switches. The system block diagram is shown in Figure 3.2. The mother board consists of EMI filter, start up circuit, line frequency Si MOSFETs and their gate drive circuits, and voltage and current sensing circuits. The PFC controller daughter board requires 3.3-V input and it includes current, input line voltage and output voltage sampling pins as inputs. The outputs are 4 PWM pins, in which 2 of them are applied to the GaN half bridge and the other 2 are applied to the line frequency Si MOSFETs.

Features

  • Ultra-low FOM Island Technology® die
  • Low inductance GaNPX® package
  • Easy gate drive requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 / +10 V )
  • Very high switching frequency (> 100 MHz)
  • Fast and controllable fall and rise times
  • Reverse current capability
  • Zero reverse recovery loss
  • Small 9 x 7.6 mm2 PCB footprint
  • Dual gate pads for optimal board layout
  • RoHS 6 compliant

Typical applications

  • High efficiency power conversion / Uninterruptable Power Supplies
  • Industrial Motor Drives
  • Solar and Wind Power
  • Fast Battery Charging

Products

Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
C
Safety Class
dV/dt(V/µs)
DF @ 1 kHz(%)
RISO
Pitch(mm)
Packaging
IR(A)
L(mH)
RDC max.(mΩ)
VR(V (AC))
VT(V (AC))
Material
L(mm)
W(mm)
H(mm)
Mount
Samples
WCAP-FTX2 Film Capacitors, Across the mains, 1 µF
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance1 µF
Safety ClassX2 
Rate of Voltage Rise170 V/µs
Dissipation Factor0.1 %
Insulation Resistance10 GΩ
Pitch22.5 mm
PackagingCarton 
Rated Voltage275 V (AC)
Length26 mm
Width11 mm
Height20 mm
MountBoxed THT 
WE-CMBNC Common Mode Power Line Choke Nanocrystalline, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Rated Current20 A
Inductance1 mH
DC Resistance2.4 mΩ
Rated Voltage300 V (AC)
Insulation Test Voltage2100 V (AC)
MaterialNanocrystalline 
Length30 mm
Width19 mm
Height28 mm
MountTHT