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EPC EPC2014

Enhancement Mode Power Transistor

Overview

TopologyOther Topology

Description

Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral devicestructure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.

Features

  • Ultra High Efficiency
  • Ultra Low RDS(on)
  • Ultra low QG
  • Ultra small footprint

Typical applications

  • Hard Switched and High Frequency Circuits
  • High Speed DC-DC conversion
  • Class D Audio

Products

Order Code Data­sheet Downloads Product seriesPinsPitch
(mm)
GenderTypeMountIR 1
(A)
Working Voltage
(V (AC))
PCB/Cable/PanelContact Resistance
(mΩ)
Tol. RL
(mm)
Packaging Samples
645002114822
IGE STE 3D ALT EAG CADWR-WTB 3.96 mm Male Vertical Locking Header 2 3.96 Male Vertical THT 7 250 PCB 20 max. 7.92 Bag
Order Code Data­sheet
645002114822
Samples
Order Code Data­sheet Downloads Product seriesPinsPitch
(mm)
GenderTypeMountIR 1
(A)
Working Voltage
(V (AC))
PCB/Cable/PanelContact Resistance
(mΩ)
Tol. RL
(mm)
Packaging Samples