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EPC EPC2014

Enhancement Mode Power Transistor

Details

TopologieSonstige Topologie

Beschreibung

Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral devicestructure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.

Eigenschaften

  • Ultra High Efficiency
  • Ultra Low RDS(on)
  • Ultra low QG
  • Ultra small footprint

Typische Anwendungen

  • Hard Switched and High Frequency Circuits
  • High Speed DC-DC conversion
  • Class D Audio

Weiterführende Informationen

Artikeldaten

Artikel Nr. Daten­blatt Downloads ProduktseriePinsP
(mm)
GenderTypMontageartIR 1
(A)
Arbeitsspannung
(V (AC))
PCB/Kabel/PanelKontaktwiderstand
(mΩ)
Tol. RL
(mm)
Verpackung Muster
645002114822SPEC
6 Dateien WR-WTB 3.96 mm Male Vertical Locking Header 2 3.96 Männlich Vertikal THT 7 250 PCB 20 max. 7.92 Beutel
Artikel Nr. Daten­blatt
645002114822SPEC
Muster
Artikel Nr. Daten­blatt Downloads ProduktseriePinsP
(mm)
GenderTypMontageartIR 1
(A)
Arbeitsspannung
(V (AC))
PCB/Kabel/PanelKontaktwiderstand
(mΩ)
Tol. RL
(mm)
Verpackung Muster