IC-Hersteller (103)
- Alle Hersteller
Analog Devices
Infineon Technologies
Microchip
Onsemi
Renesas
ROHM
STMicroelectronics
Texas Instruments
- 3peak incorporated (28)
- Ablic (23)
- Acco Semiconductor (1)
- Advanced Power (4)
- Allegro Microsystems (100)
- Alpha & Omega Semiconductor (37)
- AnalogySemi (3)
- AnDAPT Inc (204)
- Anpec (13)
- AXElite (2)
- Backward (6)
- Bright Power Semiconductor (1)
- Broadcom (46)
- Cambridge GaN Devices (18)
- Chipanalog Micro (10)
- Cologne Chips (1)
- Convenient Power (1)
- Dialog Semiconductor (12)
- Diodes Incorporated (259)
- Divimath (8)
- Elmos AG (1)
- EPC (136)
- e-Peas Semiconductors (1)
- Eta Solutions Co. Ltd. (9)
- GaN Systems (8)
- GaNPower (3)
- Giantec (1)
- Gstek Wuxi (1)
- Helix Semiconductor (7)
- IKON (1)
- Indie Semiconductor (8)
- Innovision Semiconductor Inc (2)
- Intel (68)
- Inventchip Technology (3)
- ISSI (51)
- JoulWatt (20)
- KDPOF (3)
- Kinetic Technology (8)
- Lattice semiconductor Corporation (38)
- Littelfuse (1)
- Lumissil Microsystems (8)
- M3 Technology (M3Tek) (7)
- Macnica (22)
- Marvell Semiconductor (1)
- MaxLinear (181)
- Menlo Micro (1)
- MikroE (25)
- MindCet (2)
- Monolithic Power Systems (980)
- Navitas Semiconductor Inc (6)
- NewEdge Technologies, Inc. (1)
- Nexperia (266)
- Nisshinbo Micro Device Inc. (10)
- Novosense Micro (1)
- NXP (333)
- O2 Micro International Ltd (10)
- On Bright (7)
- Panasonic (2)
- PN Junction Semiconductor (2)
- Power Integrations (117)
- Powermat (1)
- Pulsiv (19)
- Qorvo (96)
- Realsil SuRealsil(tek) Microelectronics (1)
- Richtek (297)
- Sanken Electric Co., Ltd. (16)
- Sckipio (6)
- Semtech (86)
- SG-Micro (54)
- SiFive (2)
- Silanna Semiconductor (9)
- Silergy Corporation (33)
- Silicon Laboratory Inc. (108)
- Silicontent Technology (59)
- Silvertel (59)
- Skycore Semiconductors (1)
- Skyworks (33)
- Southchip (14)
- Summit Wireless (1)
- Tagore Tech (7)
- Taiwan Semiconductor (1)
- TDK Corporation (1)
- Tempo Semiconductor (1)
- Torex (37)
- Toshiba (25)
- Transphorm (21)
- TransSIP (2)
- Union (21)
- uPI Semiconductor (2)
- Valens Semiconductor (31)
- Wise Integration (3)
- Wolfspeed (23)
- Xilinx (22)
- XL Semiconductor (3)
- XYSemi (62)
Details
| Topologie | Drahtlose Energieübertragung |
| Eingangsspannung | 7-12 V |
| Schaltfrequenz | 6780 kHz |
| Ausgang 1 | 10 A |
Beschreibung
The EPC9506 is a high efficiency, Zero Voltage Switching (ZVS),Class-D Wireless Power amplifier demonstration board operatingat 6.78 MHz (Lowest ISM band). The purpose of this demonstrationsystem is to simplify the evaluation process of wireless power technologyusing eGaN® FETs by including all the critical components on a singleboard that can be easily connected into an existing system.The amplifier board features the EPC2014 (40 V rated - EPC9506)enhancement mode field effect transistor (FET) in an optionalhalf-bridge topology (single ended configuration) or default fullbridgetopology (differential configuration), and includes thegate driver/s and oscillator that ensures operation of the systemat 6.78 MHz. The amplifer board can also be operated using anexternal oscillator.The amplifier board is equipped with a pre-regulator that limits the currentof the supply to the amplifier. As the amplifier draws more current, whichcan be due to the absence of a device coil, the pre-regulator will reducethe voltage being supplied to the amplifier that will ensure a safe operatingpoint. The pre-regulator also monitors the temperature of the mainamplifier FETs and will reduce current if the temperature exceeds 85°C.The pre-regulator can be bypassed to allow testing with custom controlhardware. The board further allows easy access to critical measurementnodes that allow accurate power measurement instrumentation hookup.A simplified diagram of the amplifier board is given in Figure 1.For more information on the EPC2014 eGaN FET please refer to the datasheetavailable from EPC at www.epc-co.com. The data-sheet should beread in conjunction with this quick start guide.
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | Material | Pins | Typ | Montageart | L(mm) | H(mm) | IR(A) | Arbeitsspannung(V (AC)) | Betriebstemperatur | IR 1(A) | PCB/Kabel/Panel | Verpackung | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCI SMT-Hochstrominduktivität, 10 µH, 5.3 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität10 µH | Performance Nennstrom5.3 A | Sättigungsstrom 11.8 A | Sättigungsstrom @ 30%4 A | Gleichstromwiderstand33 mΩ | Eigenresonanzfrequenz40 MHz | MaterialSuperflux | Pins2 | – | MontageartSMT | Länge7 mm | Höhe4.8 mm | – | – | Betriebstemperatur -40 °C up to +150 °C | – | – | – | ||||
 | WR-PHD Stiftleisten - Einreihig, –, – | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWR-PHD Stiftleisten - Einreihig | – | – | – | – | – | – | – | Pins3 | TypGerade | MontageartTHT | Länge7.62 mm | – | Nennstrom3 A | Arbeitsspannung250 V (AC) | Betriebstemperatur -40 °C up to +105 °C | – | – | VerpackungBeutel | |||
 | WR-WTB 3.96 mm Stiftleisten, –, – | Simulation– | Downloads7 Dateien | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWR-WTB 3.96 mm Stiftleisten | – | – | – | – | – | – | – | Pins2 | TypVertikal | MontageartTHT | Länge7.92 mm | – | Nennstrom7 A | Arbeitsspannung250 V (AC) | Betriebstemperatur -40 °C up to +105 °C | Nennstrom [1]7 A | PCB/Kabel/PanelPCB | VerpackungBeutel |