IC-Hersteller Diodes Incorporated
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Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 4.5-40 V |
| Schaltfrequenz | 1000 kHz |
Beschreibung
The AL8860EV1, Figure 1, is a double sided evaluation board for the AL8860 step-down, or ‘buck’, LED driver with internal switch. The evaluation board is preset to drive 680mA into a single LED, or multiple LEDs, the maximum number of which depends on their total forward voltage drop and the supply voltage. (The maximum drive current of the AL8860 is 1000mA)
Eigenschaften
- Low BOM Counts
- Wide Input Voltage Range: 4.5V to 40V
- Output Current Up to 1.5A
- Internal 40V NDMOS Switch
- Typical 5% Output Current Accuracy
- Single Pin for On/Off and Brightness Control by DC Voltage or PWM Signal
- Recommended Analog Dimming Range: 5% ~100%
- Soft-Start
- High Efficiency (Up to 97%)
- LED Short Protection
- Inherent Open-Circuit LED Protection
- Over Temperature Protection (OTP)
- Up to 1MHz Switching Frequency
- Pb-Free TSOT25 and MSOP-8EP Packages
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
Typische Anwendungen
- External Driver with Multiple Channels
- Low Voltage Industrial Lighting/ LED Retrofit for Low Voltage Halogen/ LED Backlighting/ Illuminated Signs
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | ISAT(A) | RDC max.(mΩ) | fres(MHz) | Bauform | Version | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-PD SMT-Speicherdrossel, 22 µH, 2.7 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD SMT-Speicherdrossel | Induktivität22 µH | Sättigungsstrom2.7 A | Gleichstromwiderstand133 mΩ | Eigenresonanzfrequenz17.5 MHz | Bauform1030 | VersionPerformance | ||||
| WE-PD SMT-Speicherdrossel, 33 µH, 2.2 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD SMT-Speicherdrossel | Induktivität33 µH | Sättigungsstrom2.2 A | Gleichstromwiderstand204 mΩ | Eigenresonanzfrequenz13 MHz | Bauform1030 | VersionPerformance | ||||
| WE-PD SMT-Speicherdrossel, 47 µH, 1.9 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD SMT-Speicherdrossel | Induktivität47 µH | Sättigungsstrom1.9 A | Gleichstromwiderstand248 mΩ | Eigenresonanzfrequenz11.4 MHz | Bauform1030 | VersionPerformance | ||||
| WE-PD SMT-Speicherdrossel, 68 µH, 1.6 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD SMT-Speicherdrossel | Induktivität68 µH | Sättigungsstrom1.6 A | Gleichstromwiderstand330 mΩ | Eigenresonanzfrequenz9.4 MHz | Bauform1030 | VersionPerformance | ||||
| WE-PD SMT-Speicherdrossel, 100 µH, 1.4 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD SMT-Speicherdrossel | Induktivität100 µH | Sättigungsstrom1.4 A | Gleichstromwiderstand478 mΩ | Eigenresonanzfrequenz7.7 MHz | Bauform1030 | VersionPerformance | ||||
| WE-PD SMT-Speicherdrossel, 150 µH, 1.1 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD SMT-Speicherdrossel | Induktivität150 µH | Sättigungsstrom1.1 A | Gleichstromwiderstand684 mΩ | Eigenresonanzfrequenz6.1 MHz | Bauform1030 | VersionPerformance | ||||
 | WE-PD SMT-Speicherdrossel, 220 µH, 1.2 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD SMT-Speicherdrossel | Induktivität220 µH | Sättigungsstrom1.2 A | Gleichstromwiderstand439 mΩ | Eigenresonanzfrequenz4.3 MHz | Bauform1050 | VersionPerformance |