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IC-Hersteller ADI Power by Linear

IC-Hersteller (84)

ADI Power by Linear LT8302 | Demoboard RD001

6W LT8302 Wurth Ref. Design

Details

TopologieSperrwandler
Eingangsspannung9-18 V
Ausgang 14 V / 0.32 A
Ausgang 215 V / 0.32 A
IC-Revision00

Beschreibung

Silicon Carbide (SiC) technology is enjoying growing popularity in medium and high voltage power switching applications (typically above 300 V). The extremely fast switching speed of SiC-MOSFETs, their low ON-resistance and excellent thermal performance (conductivity and stability) are some of the key advantages against its Silicon-based counterparts. SiC devices are thus starting to replace IGBT (Insulated Gate Bipolar Transistor) in many applications in industries as diverse as E-mobility, industrial and renewable energy.The voltage required across the gate-source terminals of a SiC-MOSFET is typically 14 to 20 V for full turn-on and -2 to -5 V for robust turn-off. Note that this negative voltage is required for a faster turn-off transition as well as to keep the device off reliably, preventing spurious Miller-effect turn-on in hard-switched half-bridge applications, due to the very high dv/dt generated across the device terminals during the fast switching transitions. In addition, minimizing the total parasitic capacitance across the isolation barrier is critical for SiC Gate Driver systems in order to achieve higher Common Mode Transient Immunity (CMTI) and better EMI performance.

Eigenschaften

This reference design presents an extremely compact auxiliary power supply, providing two isolated output rails of +15 V and -4 V with a combined total output power of 6 W. With the extremely low interwinding capacitance of the WE-AGDT Transformer down to 6.8 pF, the design is especially optimized for driving Silicon Carbide (SiC) MOSFETs in state-of-the-art applications, and also suitable for IGBT devices.

Weiterführende Informationen

Artikeldaten

Artikel Nr. Daten­blatt Simu­lation Downloads ProduktserieCTol. CVR
(V (DC))
BauformBetriebstemperaturDF
(%)
RISOKeramiktypL
(mm)
W
(mm)
H
(mm)
Fl
(mm)
VerpackungTechnische ArtikelnummerVin
(V)
VOut1
(V)
VOut2
(V)
PO
(W)
CWW 1
(pF)
L
(µH)
ISAT
(A)
fswitch
(kHz)
nIC-Referenz Muster
885012207102SPEC
6 Dateien WCAP-CSGP MLCCs 50 V(DC)470 nF ±10% 50 0805 -55 bis zu +125 °C 31.1 GΩ X7R Klasse II 2 1.25 1.25 0.5 7\" Tape & Reel X7R0805474K050DFCT10000
885012207103SPEC
6 Dateien WCAP-CSGP MLCCs 50 V(DC)1 µF ±10% 50 0805 -55 bis zu +125 °C 100.1 GΩ X7R Klasse II 2 1.25 1.25 0.5 7\" Tape & Reel X7R0805105K050DFCT10000
885012108022SPEC
6 Dateien WCAP-CSGP MLCCs 50 V(DC)10 µF ±10% 50 1206 -55 bis zu +85 °C 100.005 GΩ X5R Klasse II 3.2 1.6 1.6 0.6 7\" Tape & Reel X5R1206106K050DFCT10000
750318131SPEC
8 Dateien WE-AGDT Auxiliary Gate Drive Transformer EP7 -40 bis zu +130 °C 11.3 10.95 11.94 9 - 18 15 -4 6 7.5 7 5 350 2.25:3.5:1 LT8302
Muster
Artikel Nr. Daten­blatt Simu­lation Downloads ProduktserieCTol. CVR
(V (DC))
BauformBetriebstemperaturDF
(%)
RISOKeramiktypL
(mm)
W
(mm)
H
(mm)
Fl
(mm)
VerpackungTechnische ArtikelnummerVin
(V)
VOut1
(V)
VOut2
(V)
PO
(W)
CWW 1
(pF)
L
(µH)
ISAT
(A)
fswitch
(kHz)
nIC-Referenz Muster