IC manufacturers Renesas

IC manufacturers (108)

Renesas RRP68150/RTP100E1P2G1FL-DSC | Demoboard EVB-RTP100E1P2G1FL-DSC

RTP100E1P2G1FL-DSC Low Voltage GaN Evaluation Board

Overview

TopologyBuck Converter
Input voltage48 V
Output 112 V / 30 A
IC revision1

Description

The EVB-RTP100E1P2G1FL-DSC evaluation board demonstrates the performance advantages of our low-voltage GaN technology in a high-efficiency synchronous buck converter. Featuring two RTP100E1P2G1FL-DSC 100V enhancement-mode (E-mode) gallium nitride (GaN) FETs in a half-bridge configuration and driven by the RRP68150 GaN gate driver, the board provides a compact platform for evaluating high-frequency power conversion designs.The board enables evaluation of switching performance, efficiency, thermal behavior, and power density across a wide range of operating conditions. Integrated test points simplify waveform measurements and power-loss analysis, helping optimize power-stage layouts and demonstrate how dual-side-cooled (DSC) GaN technology can improve next-generation power conversion systems.

Features

Performance testing of low-voltage GaN over a wide range of operating conditionsFlexible and user-friendly buck converter evaluation boardEvaluate system performance using the RRP68150 gate driverHigh-frequency power conversion optimizationConvenient test points for waveform measurementSupports high-efficiency, high-power-density designsDemonstrates DSC GaN thermal advantages

Typical applications

  • Power supply

Parts approved by Renesas

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Data­sheet
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Product series
L(µH)
IRP,40K(A)
ISAT,10%(A)
ISAT,30%(A)
RDC max.(mΩ)
fres(MHz)
Wire Type
SamplesAvailability & Sample
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SPECWE-HCF SMT High Current Inductor, 2.2 µH, 44 A
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Availability
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Status
ActiveProduction is active. Expected lifetime: >10 years.
iProduction is active. Expected lifetime: >10 years.
Inductance2.2 µH
Performance Rated Current44 A
Saturation Current @ 10%85 A
Saturation Current @ 30%88.5 A
DC Resistance1.44 mΩ
Self Resonant Frequency32.8 MHz
Wire TypeFlat 
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