| Topology | Flyback Converter |
| Input voltage | 37-57 V |
| Output 1 | 24 V / 2.7 A |
The MAXREFDES1266 is a 65W, 24V Power-over-Ethernet (POE) solution that delivers up to 2.7A load current. The design is optimized for applications with a 37V to 57V input voltage range. The design is a fully assembled, surface-mount circuit board featuring an Ethernet port, network-powered device (PD) interface controller, and a downstream CCM flyback converter. The design receives power from an IEEE® 802.3bt-compliant power-sourcing equipment (PSE).The MAXREFDES1266 employs a MAX5974A fixed-frequency, current-mode PWM controller in continuous mode flyback configuration. The MAX5974A features unique circuitry to achieve output regulation without using an optocoupler. The device features a unique feed-forward maximum duty-cycle clamp that makes the maximum clamp voltage during transient conditions independent of the line voltage, allowing the use of a power MOSFET with lower breakdown voltage. The programmable frequency dithering feature provides low-EMI, spread-spectrum operation.The MAX5995B is used to provide a complete interface for a PD to comply with the IEEE 802.3bt standard in a POE system. It provides the PD with a detection signature, classification signature, and an integrated isolation power switch with startup inrush current control. The devices support a multi-event classification method, as specified in the IEEE 802.3bt standard. They provide a signal to indicate a Type 1 to Type 4 PSE. The devices can detect the presence of a wall adapter power source connection and allow a smooth switchover from the PoE power source to the wall power adapter. The devices also provide a power-good (PG) signal, two-step current limit, and foldback control and overtemperature protection.
Order Code | Datasheet | Simulation | Downloads | Status | Product series | n | L(µH) | ∫Udt(µVs) | VT(V (DC)) | CWW 1(pF) | LS(µH) | Size | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | WE-GDT Gate-Drive-Transformer, 1:1, 370 µH | Simulation– | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-GDT Gate-Drive-Transformer | Turns Ratio1:1 | Inductance370 µH | Voltage-µSecond30.2 µVs | Insulation Test Voltage1500 V (DC) | Interwinding Capacitance10 pF | Leakage Inductance1.8 µH | SizeEP5 | |||
749022016 | 10/100/1000 Base-T SMT Transformer, –, 350 µH | Downloads– | Status Activei| Production is active. Expected lifetime: >10 years. | Product series 10/100/1000 Base-T SMT Transformer | – | Inductance350 µH | – | Insulation Test Voltage1500 V (DC) | – | – | – |