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Details
| Topologie | Aufwärtswandler |
Typische Anwendungen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | Material | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCI SMT-Hochstrominduktivität, 2.2 µH, 10.2 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität2.2 µH | Performance Nennstrom10.2 A | Sättigungsstrom 15.6 A | Sättigungsstrom @ 30%13 A | Gleichstromwiderstand11.4 mΩ | Eigenresonanzfrequenz52 MHz | MaterialSuperflux |