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Details
| Topologie | Sonstige Topologie |
Typische Anwendungen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC max.(mΩ) | Material | LR(µH) | fres(MHz) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCC SMT-Hochstrominduktivität, 2.2 µH, 17.4 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCC SMT-Hochstrominduktivität | Induktivität2.2 µH | Performance Nennstrom17.4 A | Sättigungsstrom 122.5 A | Sättigungsstrom @ 30%25.6 A | Gleichstromwiderstand4.8 mΩ | MaterialFerrite | Nenninduktivität2.1 µH | Eigenresonanzfrequenz80 MHz |