| Topologie | Abwärtswandler |
| Eingangsspannung | 11.4-12.6 V |
| Schaltfrequenz | 197.9-596.8 kHz |
| Ausgang 1 | 1.5 V / 10 A |
| Ausgang 2 | 1.05 V / 10 A |
| IC-Revision | 11 |
This reference guide describes the specifications, use, and various properties of the Non-Isolated Buck DC-DC Converter (hereafter referred to as this power supply). This reference design consists of 24 types of DC-DC converter designs in total. All take DC12 V as inputs and generate 8 different outputs which are DC 5 V/5 A, DC 5 V/8 A, DC 5 V/12 A, DC 3.3 V/10 A, DC 3.3 V/13.3 A, DC 3.3V/18.2 A, DC 1.5 V/10 A, DC 1.05 V/10 A, and each one further optimized in 3 ways, i.e. for: 50 % load efficiency, 100 % load efficiency, and area. Since small components are selected, they can be applied to Point of Load power supplies of various sizes and applications. Our power MOSFETs are used as switching elements, which allows high-speed switching and high-efficiency.
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | Material | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | WE-HCI SMT-Hochstrominduktivität, 0.33 µH, 30.9 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität0.33 µH | Performance Nennstrom30.9 A | Sättigungsstrom 115 A | Sättigungsstrom @ 30%36 A | Gleichstromwiderstand2.17 mΩ | Eigenresonanzfrequenz119 MHz | MaterialSuperflux | ||||
![]() | WE-HCI SMT-Hochstrominduktivität, 0.47 µH, 19.5 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität0.47 µH | Performance Nennstrom19.5 A | Sättigungsstrom 18 A | Sättigungsstrom @ 30%16 A | Gleichstromwiderstand2.75 mΩ | Eigenresonanzfrequenz280 MHz | MaterialSuperflux |