Texas Instruments UCC5870-Q1 | Demoboard UCC5870QDWJEVM-026

Beschreibung

The UCC5870-Q1 device is an isolated, highly configurable single-channel gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections, such as shunt-resistor–based overcurrent, NTC-based overtemperature, and DESAT detection, include selectable soft turn-off or two-level turn-off during these faults. To further reduce the application size, the UCC5870-Q1 integrates a 4-A active Miller clamp during switching, and an active gate pulldown while the driver is unpowered. An integrated 10-bit ADC enables monitoring of up to six analog inputs and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL-D compliant systems. The parameters and thresholds for these features are configurable using the SPI interface, which allows the device to be used with nearly any SiC MOSFET or IGBT.

Eigenschaften

• 15-A peak split sink/source drive current for fast turn ON and turn OFF time
• Driver output voltages by default are +15V/-8V with 12-V input supply
• 3750-VRMS one minute isolation per UL 1577 for UCC5870-Q1
• 3000-VRMS one minute isolation for the flyback transformer

• 8-mm creepage distance between primary and secondary

• Desat short-circuit protection and active Vce clamp
• Active miller clamp using internal or external FET
• Fault feedback and reset
• ADC for temperature sensing and DC bus voltage sensing
• Primary and secondary ASC
• SPI based device reconfiguration, verification, supervision and diagnosis
• Compatible with 820A 750V IGBT module FS820R08A6P2B

Typische Anwendungen

• HEV and EV traction inverter, HEV and EV power modules

Weiterführende Informationen

• Datenblatt
• Produktseite des IC-Herstellers