IC-Hersteller Texas Instruments

IC-Hersteller (103)

Texas Instruments TPS61131

SYNCHRONOUS SEPIC / FLYBACK CONVERTER WITH 1.1A SWITCH

Details

TopologieSEPIC Buck-Boost Topologie
Eingangsspannung1.8-6.5 V
Schaltfrequenz400-600 kHz
Ausgang 13.3 V / 0.3 A
IC-RevisionC

Beschreibung

The TPS6113x devices provide a complete power supply solution for products powered by either a one-cell Li-Ion or Li-Polymer, or two- to four-cell Alkaline, NiCd, or NiMH batteries. The devices can generate two regulated output voltages. It provides a simple and efficient buck-boost solution for generating 3.3 V out of an input voltage that can be both higher and lower than the output voltage. The converter provides a maximum output current of at least 300 mA with supply voltages down to 1.8 V. The implemented SEPIC converter is based on a fixed frequency, pulse-width-modulation (PWM) controller using a synchronous rectifier to obtain maximum efficiency. The maximum peak current in the SEPIC switch is limited to a value of 1600 mA.

Eigenschaften

  • Synchronous, Up To 90% Efficient, SEPIC Converter With 300-mA Output Current From 2.5-V Input
  • Integrated 200-mA Reverse Voltage Protected
  • LDO for DC/DC Output Voltage Post
  • Regulation or Second Output Voltage
  • 40-mA (Typical) Quiescent Current
  • Input Voltage Range: 1.8-V to 5.5-V
  • Fixed and Adjustable Output Voltage Options up to 5.5-V
  • Power Save Mode for Improved Efficiency at Low Output Power
  • Low Battery Comparator
  • Power Good Output
  • Low EMI-Converter (Integrated Antiringing Switch)
  • Load Disconnect During Shutdown
  • Overtemperature Protection
  • Available in a Small 4mm x 4mm QFN-16 or in a TSSOP-16 Package

Typische Anwendungen

  • High Efficient Li-Ion to 3.3-V Conversion
  • All Single Cell Li, Dual or Triple Cell Battery USB Powered Products as MP-3 Player, PDAs,

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
L1(µH)
L2(µH)
IR 1(A)
IR 2(A)
ISAT 1(A)
RDC1 typ(Ω)
RDC2 typ(Ω)
RDC1 max(Ω)
RDC2 max(Ω)
fres(MHz)
Typ
Muster
WE-DD SMT-Doppeldrossel, 22 µH, 22 µH
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität 122 µH
Induktivität 222 µH
Nennstrom 10.7 A
Nennstrom 20.7 A
Sättigungsstrom [1]1.5 A
Gleichstromwiderstand 10.245 Ω
Gleichstromwiderstand 20.245 Ω
Gleichstromwiderstand 10.3 Ω
Gleichstromwiderstand 20.3 Ω
Eigenresonanzfrequenz20 MHz
TypGerade 
WE-DD SMT-Doppeldrossel, 22 µH, 22 µH
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität 122 µH
Induktivität 222 µH
Nennstrom 10.8 A
Nennstrom 20.8 A
Sättigungsstrom [1]1.8 A
Gleichstromwiderstand 10.215 Ω
Gleichstromwiderstand 20.215 Ω
Gleichstromwiderstand 10.26 Ω
Gleichstromwiderstand 20.26 Ω
Eigenresonanzfrequenz16 MHz
TypGerade