IC-Hersteller Texas Instruments

IC-Hersteller (103)

Texas Instruments TPS563200

Tps56x200 4.5 V To 17 V Input, 2 A, 3 A Synchronous Step-Down Voltage Regulator In 6 Pin SOT-23

Details

TopologieAbwärtswandler
Eingangsspannung4.5-17 V
Ausgang 11.05 V / 3 A
IC-RevisionC

Beschreibung

The TPS562200 and TPS563200 are simple, easy-to-use, 2 A and 3 A synchronous step-down (buck) converters in 6 pin SOT-23 package.

The devices are optimized to operate with minimum external component counts and also optimized to achieve low standby current.

These switch mode power supply (SMPS) devices employ D-CAP2 mode control providing a fast transient response and supporting both low equivalent series resistance (ESR) output capacitors such as specialty polymer and ultra-low ESR ceramic capacitors with no external compensation components.

TPS562200 and TPS563200 operate in Advanced Eco-mode, which maintains high efficiency during light load operation. The devices are available in a 6-pin 1.6mm × 2.9mm SOT (DDC) package, and specified from –40°C to 85°C of ambient temperature.

Eigenschaften

  • TPS562200 - 2A converter with Integrated 122 mΩ and 72 mΩ FETs
  • TPS563200 - 3A converter with Integrated 68 mΩ and 39 mΩ FETs
  • D-CAP2™ Mode Control for Fast Transient Response
  • Input Voltage Range: 4.5 V to 17 V
  • Output Voltage Range: 0.76 V to 7 V
  • 650 kHz Switching Frequency
  • Advanced Eco-mode™ Pulse-skip
  • Low Shutdown Current Less than 10 µA
  • 1% Feedback Voltage Accuracy (25°C)
  • Startup from Pre-Biased Output Voltage
  • Cycle-By-Cycle Overcurrent Limit
  • Hiccup-Mode Undervoltage Protection
  • Non-latch OVP, UVLO and TSD Protections
  • Fixed Soft Start: 1 ms

Remarks:

  • Refer page 19 for more inductor values ranges.

Typische Anwendungen

  • Digital TV Power Supply
  • Networking Home Terminal
  • High Definition Blu-ray Disc™ Players
  • Digital Set Top Box (STB)

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
L(µH)
IRP,40K(A)
ISAT,10%(A)
ISAT,30%(A)
RDC(mΩ)
fres(MHz)
Material
Muster
WE-HCI SMT-Hochstrominduktivität, 1.5 µH, 13.8 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität1.5 µH
Performance Nennstrom13.8 A
Sättigungsstrom 14.5 A
Sättigungsstrom @ 30%14 A
Gleichstromwiderstand6.6 mΩ
Eigenresonanzfrequenz72 MHz
MaterialSuperflux