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Texas Instruments TPS54116-Q1 | Demoboard TPS54116-Q1EVM-830
TPS54116-Q1 Automotive DDR Power Solution Evaluation Module
Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 2.95-6 V |
| Ausgang 1 | 1.5 V / 4 A |
| IC-Revision | 00 |
Beschreibung
TPS54116-Q1EVM-830 4-A, 1-A, SWIFT™ Regulator Evaluation ModuleThe TPS54116-Q1EVM-830 evaluation module (EVM) facilitates evaluation of the TPS54116-Q1 Automotive DDR Power Solution with 4 A, 2-MHz VDDQ DC/DC Converter and 1 A VTT LDO. The EVM operates from a 2.95 V to 6 V input and delivers a 4 A DDR VDDQ output. The EVM includes an integrated 1 A VTT LDO output with on board VTT sink and source switched load.
Eigenschaften
DDR VDDQ and VTT outputsIncluded VTT source / sink dynamic loadVTTREF outputVDDQ up to 4 AVTT output up to ±1 A
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC max.(mΩ) | fres(MHz) | Montageart | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-LHMI SMT Speicherdrossel, 0.68 µH, 7.3 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LHMI SMT Speicherdrossel | Induktivität0.68 µH | Performance Nennstrom7.3 A | Sättigungsstrom 17.1 A | Sättigungsstrom @ 30%14 A | Gleichstromwiderstand19 mΩ | Eigenresonanzfrequenz90 MHz | MontageartSMT |