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Details
| Topologie | Aufwärtswandler |
| IC-Revision | 1.0 |
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | Material | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCI SMT-Hochstrominduktivität, 0.47 µH, 50.1 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität0.47 µH | Performance Nennstrom50.1 A | Sättigungsstrom 124 A | Sättigungsstrom @ 30%50 A | Gleichstromwiderstand0.9 mΩ | Eigenresonanzfrequenz95 MHz | MaterialWE-PERM |