IC-Hersteller Texas Instruments

IC-Hersteller (103)

Texas Instruments TPS40077

HIGH-EFFICIENCY, MIDRANGE-INPUT, SYNCHRONOUS BUCK CONTROLLER WITH VOLTAGE FEED-FORWARD

Details

TopologieAufwärtswandler
Schaltfrequenz300-1000 kHz
IC-RevisionD

Beschreibung

The TPS40077 is a midvoltage, wide-input (4.5-V to 28-V), synchronous, step-down controller, offering design flexibility for a variety of user-programmable functions, including soft start, UVLO, operating frequency, voltage feed-forward, and high-side, FET-sensed, short-circuit protection.The TPS40077 drives external N-channel MOSFETs using second-generation, predictive-gate drive to minimize conduction in the body diode of the low-side FET and maximize efficiency. Pre-biased outputs are supported bynot allowing the low-side FET to turn on until the voltage commanded by the closed-loop soft start is greater than the pre-bias voltage. Voltage feed-forward provides good response to input transients and provides a constant PWM gain over a wide input-voltage operating range to ease compensation requirements. Programmable short-circuit protection provides fault-current limiting and hiccup recovery to minimize power dissipation with a shorted output. The 16-pin PowerPAD package gives good thermal performance and a compact footprint.

Eigenschaften

  • Operation Over 4.5-V to 28-V Input Range
  • Programmable, Fixed-Frequency, up to 1-MHz,Voltage-Mode Controller
  • Predictive Gate Drive™ Anti-Cross-Conduction Circuitry
  • <1% Internal 700-mV Reference
  • Internal Gate Drive Outputs for High-Side and Synchronous N-Channel MOSFETs
  • 16-Pin PowerPAD™ Package
  • Thermal Shutdown Protection
  • Pre-Bias Compatible
  • Power-Stage Shutdown Capability
  • Programmable High-Side Sense Short-Circuit Protection

Typische Anwendungen

  • Power Modules
  • PCI Express
  • Servers
  • Industrial
  • Networking/Telecom

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
L(µH)
IRP,40K(A)
ISAT,10%(A)
ISAT,30%(A)
RDC(mΩ)
fres(MHz)
Material
Muster
WE-HCI SMT-Hochstrominduktivität, 0.47 µH, 50.1 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität0.47 µH
Performance Nennstrom50.1 A
Sättigungsstrom 124 A
Sättigungsstrom @ 30%50 A
Gleichstromwiderstand0.9 mΩ
Eigenresonanzfrequenz95 MHz
MaterialWE-PERM