IC-Hersteller Texas Instruments
IC-Hersteller (103)
- Alle Hersteller
Analog Devices
Infineon Technologies
Microchip
Onsemi
Renesas
ROHM
STMicroelectronics
Texas Instruments
- 3peak incorporated (28)
- Ablic (23)
- Acco Semiconductor (1)
- Advanced Power (4)
- Allegro Microsystems (100)
- Alpha & Omega Semiconductor (37)
- AnalogySemi (3)
- AnDAPT Inc (204)
- Anpec (13)
- AXElite (2)
- Backward (6)
- Bright Power Semiconductor (1)
- Broadcom (46)
- Cambridge GaN Devices (18)
- Chipanalog Micro (10)
- Cologne Chips (1)
- Convenient Power (1)
- Dialog Semiconductor (12)
- Diodes Incorporated (259)
- Divimath (8)
- Elmos AG (1)
- EPC (140)
- e-Peas Semiconductors (1)
- Eta Solutions Co. Ltd. (9)
- GaN Systems (8)
- GaNPower (3)
- Giantec (1)
- Gstek Wuxi (1)
- Helix Semiconductor (7)
- IKON (1)
- Indie Semiconductor (8)
- Innovision Semiconductor Inc (2)
- Intel (68)
- Inventchip Technology (3)
- ISSI (51)
- JoulWatt (20)
- KDPOF (3)
- Kinetic Technology (8)
- Lattice semiconductor Corporation (38)
- Littelfuse (1)
- Lumissil Microsystems (8)
- M3 Technology (M3Tek) (7)
- Macnica (22)
- Marvell Semiconductor (1)
- MaxLinear (181)
- Menlo Micro (1)
- MikroE (25)
- MindCet (2)
- Monolithic Power Systems (980)
- Navitas Semiconductor Inc (6)
- NewEdge Technologies, Inc. (1)
- Nexperia (267)
- Nisshinbo Micro Device Inc. (10)
- Novosense Micro (1)
- NXP (336)
- O2 Micro International Ltd (10)
- On Bright (7)
- Panasonic (2)
- PN Junction Semiconductor (2)
- Power Integrations (117)
- Powermat (1)
- Pulsiv (19)
- Qorvo (97)
- Realsil SuRealsil(tek) Microelectronics (1)
- Richtek (297)
- Sanken Electric Co., Ltd. (16)
- Sckipio (6)
- Semtech (86)
- SG-Micro (57)
- SiFive (2)
- Silanna Semiconductor (9)
- Silergy Corporation (33)
- Silicon Laboratory Inc. (108)
- Silicontent Technology (59)
- Silvertel (59)
- Skycore Semiconductors (1)
- Skyworks (33)
- Southchip (14)
- Summit Wireless (1)
- Tagore Tech (7)
- Taiwan Semiconductor (1)
- TDK Corporation (1)
- Tempo Semiconductor (1)
- Torex (37)
- Toshiba (25)
- Transphorm (21)
- TransSIP (2)
- Union (21)
- uPI Semiconductor (2)
- Valens Semiconductor (31)
- Wise Integration (3)
- Wolfspeed (23)
- Xilinx (22)
- XL Semiconductor (3)
- XYSemi (62)
Details
| Topologie | Abwärts- und Aufwärtswandler |
| Eingangsspannung | 0.7-5.5 V |
| Ausgang 1 | 1.8 V |
| IC-Revision | H |
Beschreibung
The TPS61099x device is a synchronous boostconverter with 1-μA ultra-low quiescent current. Thedevice is designed for products powered by analkaline battery, NiMH rechargeable battery, Li-Mnbattery or rechargeable Li-Ion battery, for which highefficiency under light load condition is critical toachieve long battery life operation.
Eigenschaften
600 nA Ultra-Low IQ into VOUT Pin
- 400 nA Ultra-Low IQ into VIN Pin
- Operating Input Voltage from 0.7 V to 5.5 V
- Adjustable Output Voltage from 1.8 V to 5.5 V
- Fixed Output Voltage Versions Available
- Minimum 0.8 A Switch Peak Current Limit
- Regulated Output Voltage in Down Mode
- True Disconnection During Shutdown
- Up to 75% Efficiency at 10 μA Load with FixedOutput Voltage Versions
- Up to 93% Efficiency from 10 mA to 300 mA Load
- 6-Ball 1.23 mm x 0.88 mm WCSP Package
Typische Anwendungen
- Memory LCD Bias / Optical Heart Rate Monitor LED Bias
- Wearable Applications / Portable Products
- Low Power Wireless Applications
- Battery Powered Systems
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IR(A) | ISAT(A) | RDC(mΩ) | fres(MHz) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-LQS SMT-Speicherdrossel, 1 µH, 2.3 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LQS SMT-Speicherdrossel | Induktivität1 µH | Nennstrom2.3 A | Sättigungsstrom2.5 A | Gleichstromwiderstand36 mΩ | Eigenresonanzfrequenz159 MHz | ||||
| WE-LQS SMT-Speicherdrossel, 2.2 µH, 1.65 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LQS SMT-Speicherdrossel | Induktivität2.2 µH | Nennstrom1.65 A | Sättigungsstrom1.9 A | Gleichstromwiderstand80 mΩ | Eigenresonanzfrequenz83 MHz |