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ReferenzdesignLMZ12008

Texas Instruments LMZ12008

LMZ12008 8A SIMPLE SWITCHER® Power Module with 20V Maximum Input Voltage

Details

TopologieAbwärtswandler
Eingangsspannung6-20 V
Schaltfrequenz314-404 kHz
Ausgang 12.5 V / 8 A
Ausgang 23.3 V / 8 A
Ausgang 35 V / 8 A
Ausgang 41.2 V / 8 A
IC-RevisionG

Beschreibung

The LMZ12008 SIMPLE SWITCHER© power module is an easy-to-use step-down DC-DC solution capable of driving up to 8A load. The LMZ12008 is available in an innovative package that enhances thermal performance and allows for hand or machine soldering.

The LMZ12008 can accept an input voltage rail between 6V and 20V and deliver an adjustable and highly accurate output voltage as low as 0.8V. The LMZ12008 only requires two external resistors and external capacitors to complete the power solution. The LMZ12008 is a reliable and robust design with the following protection features: thermal shutdown, programmable input under-voltage lockout, output over-voltage protection, short-circuit protection, output current limit, and allows startup into a pre-biased output

Eigenschaften

  • Integrated Shielded Inductor
  • Simple PCB Layout
  • Fixed Switching Frequency (350kHz)
  • Flexible Startup Sequencing Using External Soft-start, Tracking and Precision Enable
  • Protection Against Inrush Currents and Faults such as Input UVLO and Output Short Circuit
  • –40°C to125°C Junction Temperature Range
  • Single Exposed Pad and Standard Pinout for Easy Mounting and Manufacturing
  • Fully Enabled for Webench®Power Designer
  • Pin Compatible with LMZ22010/08/06, LMZ12010/06,LMZ23610/08/06,and LMZ13610/08/06

Remarks:L1=3.3uH Shielded Drum Core, used as a part of filter at input side of IC

Typische Anwendungen

  • Negative Output Voltage Applications
  • Time Critical Projects
  • Point of Load Conversions from 12V Input Rail
  • Space Constrained / High Thermal Requirement Applications

Weiterführende Informationen

Artikeldaten

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Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
L(µH)
IRP,40K(A)
ISAT,10%(A)
ISAT,30%(A)
RDC(mΩ)
fres(MHz)
Material
VPE
MusterVerfügbarkeit & Muster
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744314330
SPECWE-HCI SMT-Hochstrominduktivität, 3.3 µH, 10.9 A
Simu­lation
Verfügbarkeit
–
Downloads9 Dateien

Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
ProduktserieWE-HCI SMT-Hochstrominduktivität
Induktivität3.3 µH
Performance Nennstrom10.9 A
Sättigungsstrom 13.2 A
Sättigungsstrom @ 30%8 A
Gleichstromwiderstand9 mΩ
Eigenresonanzfrequenz65 MHz
MaterialSuperflux 
Verpackungseinheit1000 
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