Texas Instruments LMG3525R030 | Demoboard LMG3525EVM-042

Beschreibung

The LMG3522R030 GaN FET with integrated driver and protections is targeting switch-mode power converters and enables designers to achieve new levels of power density and efficiency.The LMG3522R030 integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20 V/ns to 150 V/ns, which can be used to actively control EMI and optimize switching performance. Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overtemperature, overcurrent, and UVLO monitoring.

Eigenschaften

• 650-V GaN-on-Si FET with integrated gate driver
• Integrated high precision gate bias voltage
• 200-V/ns FET hold-off
• 2-MHz switching frequency
• 20-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation
• Operates from 7.5-V to 18-V supply
• Robust protection
• Cycle-by-cycle overcurrent and latched shortcircuit protection with < 100-ns response
• Withstands 720-V surge while hard-switching
• Self-protection from internal overtemperature and UVLO monitoring
• Advanced power management
• Digital temperature PWM output
• Top-side cooled 12-mm × 12-mm VQFN package separates electrical and thermal paths for lowest power loop inductance

Typische Anwendungen

• Switch-mode power converters, Uninterruptable power supplies
• Solar inverters and industrial motor drives
• Merchant telecom rectifiers, Merchant network & server PSU

Weiterführende Informationen

• Datenblatt
• Produktseite des IC-Herstellers