| Topologie | Abwärtswandler |
| Eingangsspannung | 3-65 V |
| Ausgang 1 | 5 V / 0.15 A |
| IC-Revision | 00 |
The LM5165EVM-HD-C50X high density EVM is designed to use a regulated or non-regulated highvoltageinput rail ranging from 3 V to 65 V to produce a tightly regulated output voltage of 5 V at loadcurrents up to 150 mA. The wide input voltage range (“wide VIN”) DC/DC solution offers outsized voltagerating and operating margin to deal with supply rail transient voltages. The output voltage is fixed at 5Vusing the LM5165's integrated high-resistance feedback divider to reduce circuit footprint, improve noiseimmunity, and achieve a lower no-load supply current. The power train passive components selected forthis EVM, including filter inductor and ceramic input and output capacitors, are available with AEC-Q200qualification for automotive applications.
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IR(A) | ISAT(A) | RDC(mΩ) | fres(MHz) | Montageart | Muster | |
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![]() | WE-TPC SMT-Speicherdrossel, 220 µH, 0.3 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-TPC SMT-Speicherdrossel | Induktivität220 µH | Nennstrom0.3 A | Sättigungsstrom0.29 A | – | Eigenresonanzfrequenz6 MHz | MontageartSMT | ||||
![]() | WE-LQS SMT-Speicherdrossel, 220 µH, 0.66 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LQS SMT-Speicherdrossel | Induktivität220 µH | Nennstrom0.66 A | Sättigungsstrom0.75 A | Gleichstromwiderstand850 mΩ | Eigenresonanzfrequenz3.97 MHz | MontageartSMT |