| Topologie | Abwärtswandler |
| Eingangsspannung | 3-65 V |
| Ausgang 1 | 3.3 V / 0.05 A |
| IC-Revision | 00 |
voltageinput rail ranging from 3 V to 65 V to produce a tightly regulated output voltage of 5 V at loadcurrents up to 150 mA. The wide input voltage range (“wide VIN”) DC/DC solution offers outsized voltagerating and operating margin to deal with supply rail transient voltages. The output voltage is fixed at 5Vusing the LM5165's integrated high-resistance feedback divider to reduce circuit footprint, improve noiseimmunity, and achieve a lower no-load supply current. The power train passive components selected forthis EVM, including filter inductor and ceramic input and output capacitors, are available with AEC-Q200qualification for automotive applications.
Tightly-regulated output voltage of 5 V with 2% setpoint accuracy
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IR(A) | ISAT(A) | RDC(mΩ) | fres(MHz) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | WE-LQS SMT-Speicherdrossel, 47 µH, 0.4 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LQS SMT-Speicherdrossel | Induktivität47 µH | Nennstrom0.4 A | Sättigungsstrom0.41 A | Gleichstromwiderstand1050 mΩ | Eigenresonanzfrequenz15 MHz | ||||
![]() | WE-LQS SMT-Speicherdrossel, 47 µH, 0.6 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LQS SMT-Speicherdrossel | Induktivität47 µH | Nennstrom0.6 A | Sättigungsstrom0.7 A | Gleichstromwiderstand620 mΩ | Eigenresonanzfrequenz11 MHz |