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Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 9-13.2 V |
| Schaltfrequenz | 200-1500 kHz |
| Ausgang 1 | 1.2 V / 10 A |
| IC-Revision | D |
Beschreibung
The CSD86330Q3D NexFET™ power block is an optimized design for synchronous buck applications offering high current, high efficiency, and high frequency capability in a small 3.3 mm × 3.3 mm outline. Optimized for 5 V gate drive applications, this product offers a flexible solution capable of offering a high density power supply when paired with any 5 V gate drive from an external controller/driver.
Eigenschaften
- Half-Bridge Power Block
- 90% System Efficiency at 15 A
- Up to 20 A Operation
- High Frequency Operation (Up To 1.5 MHz)
- High Density – SON 3.3 mm × 3.3 mm Footprint
- Optimized for 5 V Gate Drive
- Low Switching Losses
- Ultra Low Inductance Package
- RoHS Compliant
- Halogen Free
- Pb-Free Terminal Plating
Typische Anwendungen
- High Frequency Applications
- High Current, Low Duty Cycle Applications
- POL DC-DC Converters
- Synchronous Buck Converters
- Multiphase Synchronous Buck Converters
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC max.(mΩ) | Material | LR(µH) | fres(MHz) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCC SMT-Hochstrominduktivität, 1 µH, 34 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCC SMT-Hochstrominduktivität | Induktivität1 µH | Performance Nennstrom34 A | Sättigungsstrom 130.6 A | Sättigungsstrom @ 30%33.5 A | Gleichstromwiderstand2.5 mΩ | MaterialFerrite | Nenninduktivität0.9 µH | Eigenresonanzfrequenz96 MHz |