STMicroelectronics STGAP3SXI | Demoboard EVLSTGAP3SXI

Beschreibung

The EVLSTGAP3SXI is a half-bridge evaluation board designed to evaluate the STGAP3SXI isolated single gate driver.The STGAP3SXI is characterized by 10 A current capability, rail-to-rail outputs, and optimized UVLO and DESAT protection thresholds for IGBTs, which makes the device optimal for high-power motor drivers in industrial applications.The gate driver has a single output pin and a driver line for an external Miller CLAMP N-channel MOSFET, which optimizes positive and negative gate spikes' suppression during fast commutations in half-bridge topologies.The board is supplied by the 5 V VAUX connection, which fed the isolated DC-DC converters for the low-side and high-side driving sections. The gate drivers can be directly supplied by VAUX if a 5 V MCU is used, or by the onboard linear regulator if a 3.3 V MCU is used. The PWM and Reset inputs can be easily controlled through dedicated connectors while diagnostic outputs are connected to an onboard LED.Device protection features (Desaturation, Soft turn-off, and Miller clamp) are connected to the recommended network on the board and can be easily evaluated through the board test points.Dual input pins allow the selection of signal polarity control and implementation of HW interlocking protection to avoid cross-conduction in case of controller malfunction.The device allows implementing negative gate driving, and the onboard isolated DC-DC converters allow working with optimized driving voltage for IGBTs.The EVLSTGAP3SXI board allows evaluating all of the STGAP3SXI features while operating with a bus voltage up to 1200 V.

Eigenschaften

• Half-bridge configuration
• High-voltage rail up to 1200 V (limited by the IGBT’s and capacitor’s rating)
• STGW40H120DF2 IGBTs: 1200 V, 40 A
• Compatible with 5 V and 3.3 V MCUs
• VDD logic supplied by onboard-generated 3.3 V or VAUX = 5 V
• Onboard isolated DC-DC converters to supply high-side and low-side gate drivers, fed by VAUX = 5 V, with 5.4 kVpk maximum isolation
• Easy jumper selection of driving voltage configuration: +15/0 V; +15/-4.7 V; +12/0 V; +12/-4.7 V
• Fault LED indicators
• Maximum working voltage across isolation: 1200 V
• RoHS compliant
• Driver current capability: 10 A source/sink @ 25 °C
• 75 ns input-output propagation delay
• Miller CLAMP driver for external N-channel MOSFET
• Adjustable soft turn-off function
• UVLO function
• Desaturation protection
• Gate driving voltage up to 32 V
• Negative gate driving voltage
• 3.3 V, 5 V TTL/CMOS inputs with hysteresis
• Temperature shutdown protection
• Reinforced galvanic isolation:Isolation voltage VISO = 5.7 kVRMS (UL 1577)Transient overvoltage VIOTM = 8 kVPEAK (IEC 60747-17)Max. repetitive isolation voltage VIORM = 1.2 kVPEAK (IEC 60747-17)

Typische Anwendungen

• High-power motor drivers

Weiterführende Informationen

• Datenblatt
• Produktseite des IC-Herstellers