IC-Hersteller STMicroelectronics

IC-Hersteller (103)

STMicroelectronics L5980

0.7 A step-down switching regulator

Details

TopologieAbwärtswandler
Eingangsspannung2.9-18 V
Schaltfrequenz250-1000 kHz
IC-Revision7

Beschreibung

The L5980 is a step-down switching regulator with a 1 A (min.) current limited embedded Power MOSFET, so it is able to deliver in excess of 0.7 ADC current to the load depending on the application condition.

The input voltage can range from 2.9 V to 18 V, while the output voltage can be set starting from 0.6 V to VIN. Having a minimum input voltage of2.9 V, the device is suitable also for a 3.3 V bus.

Requiring a minimum set of external components, the device includes an internal 250 kHz switching frequency oscillator that can be externallyadjusted up to 1 MHz.

The VFQFPN8 package with an exposed pad allows reducing the RthJA down to approximately 60 °C/W.

Eigenschaften

  • 0.7 A DC output current
  • 2.9 V to 18 V input voltage
  • Output voltage adjustable from 0.6 V
  • 250 kHz switching frequency, programmable up to 1 MHz
  • Internal soft-start and inhibit
  • Low dropout operation: 100% duty cycle
  • Voltage feedforward
  • Zero load current operation
  • Overcurrent and thermal protection
  • VFQFPN8 3 x 3 mm package

Remarks

  • Suggested inductor values ranges is also given in table 7. from page number 16.
  • 45uH inductor value is added from design example, refer page number 16.
  • Output current to be taken from general value. i.e 0.7A
  • Some of the Product and series to be added nearest inductor values rangesREMARKS:-TABLE 7

Typische Anwendungen

  • Consumer: STB, DVD, DVD recorder, car
  • Networking: XDSL, modems, DC-DC modules
  • LED driving
  • Industrial: chargers, PLD, PLA, FPGA
  • Computer: optical storage, hard disk drive,

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Downloads
Status
Produktserie
L(µH)
IR(A)
ISAT(A)
RDC max.(Ω)
fres(MHz)
Muster
WE-PD3 SMT-Speicherdrossel, 33 µH, 1.2 A
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität33 µH
Nennstrom1.2 A
Sättigungsstrom1.8 A
Gleichstromwiderstand0.16 Ω
Eigenresonanzfrequenz12 MHz
WE-PD3 SMT-Speicherdrossel, 47 µH, 1 A
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität47 µH
Nennstrom1 A
Sättigungsstrom1.4 A
Gleichstromwiderstand0.19 Ω
Eigenresonanzfrequenz10 MHz
WE-PD3 SMT-Speicherdrossel, 68 µH, 0.82 A
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität68 µH
Nennstrom0.82 A
Sättigungsstrom1.35 A
Gleichstromwiderstand0.34 Ω
Eigenresonanzfrequenz8 MHz