IC-Hersteller Silicontent Technology
IC-Hersteller (103)
- Alle Hersteller
Analog Devices
Infineon Technologies
Microchip
Onsemi
Renesas
ROHM
STMicroelectronics
Texas Instruments
- 3peak incorporated (28)
- Ablic (23)
- Acco Semiconductor (1)
- Advanced Power (4)
- Allegro Microsystems (100)
- Alpha & Omega Semiconductor (37)
- AnalogySemi (3)
- AnDAPT Inc (204)
- Anpec (13)
- AXElite (2)
- Backward (6)
- Bright Power Semiconductor (1)
- Broadcom (46)
- Cambridge GaN Devices (18)
- Chipanalog Micro (10)
- Cologne Chips (1)
- Convenient Power (1)
- Dialog Semiconductor (12)
- Diodes Incorporated (259)
- Divimath (8)
- Elmos AG (1)
- EPC (140)
- e-Peas Semiconductors (1)
- Eta Solutions Co. Ltd. (9)
- GaN Systems (8)
- GaNPower (3)
- Giantec (1)
- Gstek Wuxi (1)
- Helix Semiconductor (7)
- IKON (1)
- Indie Semiconductor (8)
- Innovision Semiconductor Inc (2)
- Intel (68)
- Inventchip Technology (3)
- ISSI (51)
- JoulWatt (20)
- KDPOF (3)
- Kinetic Technology (8)
- Lattice semiconductor Corporation (38)
- Littelfuse (1)
- Lumissil Microsystems (8)
- M3 Technology (M3Tek) (7)
- Macnica (22)
- Marvell Semiconductor (1)
- MaxLinear (181)
- Menlo Micro (1)
- MikroE (25)
- MindCet (2)
- Monolithic Power Systems (980)
- Navitas Semiconductor Inc (6)
- NewEdge Technologies, Inc. (1)
- Nexperia (267)
- Nisshinbo Micro Device Inc. (10)
- Novosense Micro (1)
- NXP (335)
- O2 Micro International Ltd (10)
- On Bright (7)
- Panasonic (2)
- PN Junction Semiconductor (2)
- Power Integrations (117)
- Powermat (1)
- Pulsiv (19)
- Qorvo (96)
- Realsil SuRealsil(tek) Microelectronics (1)
- Richtek (297)
- Sanken Electric Co., Ltd. (16)
- Sckipio (6)
- Semtech (86)
- SG-Micro (57)
- SiFive (2)
- Silanna Semiconductor (9)
- Silergy Corporation (33)
- Silicon Laboratory Inc. (108)
- Silicontent Technology (59)
- Silvertel (59)
- Skycore Semiconductors (1)
- Skyworks (33)
- Southchip (14)
- Summit Wireless (1)
- Tagore Tech (7)
- Taiwan Semiconductor (1)
- TDK Corporation (1)
- Tempo Semiconductor (1)
- Torex (37)
- Toshiba (25)
- Transphorm (21)
- TransSIP (2)
- Union (21)
- uPI Semiconductor (2)
- Valens Semiconductor (31)
- Wise Integration (3)
- Wolfspeed (23)
- Xilinx (22)
- XL Semiconductor (3)
- XYSemi (62)
Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 3.8-40 V |
| Ausgang 1 | 3.3 V / 3.5 A |
| IC-Revision | 1.0 |
Beschreibung
The EV2433-B-02A Evaluation Board is designed to demonstrate the capabilities of SCT2433, high efficiency fully integrated synchronous step-down DCDC converter supporting up to 3.5A continuous output current from an input source from 3.8V to 40V. The SCT2433 features 2ms internal soft-start with fixed 570KHz switching frequency. Both devices are available in an easy-soldering 8-pin ESOP package.This user's guide describes the characteristics, operation and the use of the EV2433-B-02A Evaluation Module including EVM specifications, recommended test setup, test result, schematic diagram, bill of materials, and the board layout.
Eigenschaften
- Wide Input Range: 3.8V-40V
- Up to 3.5A Continuous Output Current
- 0.8V ±1%Feedback Reference Voltage
- Integrated 80mΩ High-Side Rdson and 50mΩ
- Low-Side Rdson Power MOSFETs
- 25uA Low Quiescent Current with PulseSkipping Mode PSM at Light Load
- Low Dropout Mode Operation
- Derivable Inverting Voltage Regulator
- EMI Reduction with Frequency SpreadSpectrum FSS
- Over-voltage and Over Temperature Protection
- Available in an ESOP-8 Package
Typische Anwendungen
- Cordless Home Appliance
- Optical Communication and Networking System
- Industrial Distributed Power Supplies, Battery Pack Powered System - Cordless Power, USB Type-C Power Delivery
- Automotive System
- Cigarette Lighter Adapters, USB Chargers
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | C | Tol. C | VR(V (DC)) | Bauform | Betriebstemperatur | DF(%) | RISO | Keramiktyp | L(mm) | B(mm) | H(mm) | Fl(mm) | Verpackung | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | Material | Pins | Typ | Montageart | IR(A) | Arbeitsspannung(V (AC)) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| WCAP-CSGP MLCCs 25 V(DC), 100 nF, ±10% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 25 V(DC) | Kapazität100 nF | Kapazität±10% | Nennspannung25 V (DC) | Bauform0603 | Betriebstemperatur -55 °C up to +125 °C | Verlustfaktor3.5 % | Isolationswiderstand5 GΩ | KeramiktypX7R Klasse II | Länge1.6 mm | Breite0.8 mm | Höhe0.8 mm | Pad Dimension0.4 mm | Verpackung7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | – | |||||
| WCAP-CSGP MLCCs 50 V(DC), 100 nF, ±10% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 50 V(DC) | Kapazität100 nF | Kapazität±10% | Nennspannung50 V (DC) | Bauform0603 | Betriebstemperatur -55 °C up to +125 °C | Verlustfaktor3 % | Isolationswiderstand5 GΩ | KeramiktypX7R Klasse II | Länge1.6 mm | Breite0.8 mm | Höhe0.8 mm | Pad Dimension0.4 mm | Verpackung7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | – | |||||
| WCAP-CSGP MLCCs 50 V(DC), 4.7 µF, ±10% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 50 V(DC) | Kapazität4.7 µF | Kapazität±10% | Nennspannung50 V (DC) | Bauform1210 | Betriebstemperatur -55 °C up to +125 °C | Verlustfaktor5 % | Isolationswiderstand0.02 GΩ | KeramiktypX7R Klasse II | Länge3.2 mm | Breite2.5 mm | Höhe2.5 mm | Pad Dimension0.6 mm | Verpackung7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | – | |||||
| WCAP-CSGP MLCCs 16 V(DC), 47 µF, ±20% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 16 V(DC) | Kapazität47 µF | Kapazität±20% | Nennspannung16 V (DC) | Bauform1210 | Betriebstemperatur -55 °C up to +85 °C | Verlustfaktor10 % | Isolationswiderstand0.002 GΩ | KeramiktypX5R Klasse II | Länge3.2 mm | Breite2.5 mm | Höhe2.5 mm | Pad Dimension0.75 mm | Verpackung7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | – | |||||
 | WE-HCI SMT-Hochstrominduktivität, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | – | – | – | Bauform1050 | Betriebstemperatur -40 °C up to +150 °C | – | – | – | Länge10.5 mm | Breite10.2 mm | Höhe4.7 mm | – | – | Induktivität5.5 µH | Performance Nennstrom12 A | Sättigungsstrom 14.5 A | Sättigungsstrom @ 30%12 A | Gleichstromwiderstand10.3 mΩ | Eigenresonanzfrequenz30 MHz | MaterialSuperflux | Pins2 | – | MontageartSMT | – | – | ||||
 | WR-PHD Stiftleisten - Einreihig, –, – | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWR-PHD Stiftleisten - Einreihig | – | – | – | – | Betriebstemperatur -40 °C up to +105 °C | – | Isolationswiderstand1000 MΩ | – | Länge7.62 mm | – | – | – | VerpackungBeutel | – | – | – | – | – | – | – | Pins3 | TypGerade | MontageartTHT | Nennstrom3 A | Arbeitsspannung250 V (AC) |