IC-Hersteller SG-Micro

IC-Hersteller (103)

SG-Micro SGM6611A | Demoboard SGM6611AYTQV11G/TR Demo Board

12.6V, 7A Fully-Integrated Synchronous Boost Converter

Details

TopologieAufwärtswandler
Eingangsspannung2.7-12 V
Schaltfrequenz200-2200 kHz
Ausgang 112.6 V
IC-RevisionB

Beschreibung

The SGM6611 family includes the SGM6611A and the SGM6611B. The SGM6611 is a fully-integrated synchronous Boost converter. The 2.7V to 12V operating input voltage is suitable for single-cell or two-cell Li-Ion/Polymer batteries. This device is capable of providing 7A continuous switch current and an output voltage range of 4.5V to 12.6V. It also has an adjustable switching frequency ranging from 200kHz to2.2MHz.The SGM6611 family has two operation modes, the pulse width modulation (PWM) mode and pulse frequency modulation (PFM). The SGM6611 family adopts the PWM mode at moderate to heavy load. The PFM mode is applied at light load by SGM6611A to improve the efficiency. However, the SGM6611B still adopts the PWM mode to prevent the device from low switching frequency faults. The protection features include output over-voltage protection at 13.2V, cycle-by-cycle over-current protection and thermal shutdown. The device also involves the functions of 4ms built-in soft-start and adjustable switch peak current limit.

Eigenschaften

  • 2.7V to 12V Input Voltage Range
  • 4.5V to 12.6V Output Voltage Range
  • Up to 90% Efficiency (VIN = 3.3V, VOUT = 9V, IOUT = 2A)
  • Adjustable Peak Current Limit up to 9.5A for High Pulse Current
  • Adjustable Switching Frequency: 200kHz to 2.2MHz
  • 4ms Built-in Soft-Start Time
  • PFM Mode at Light Load (SGM6611A)
  • Forced PWM Mode at Light Load (SGM6611B)
  • 13.2V Internal Output Over-Voltage Protection
  • Over-Current Protection
  • Thermal Shutdown
  • Available in a Green TQFN-2×2.5-11L Package

Typische Anwendungen

  • Portable POS Machine, Bluetooth Speaker
  • Fast-Charging Power Bank

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
L(µH)
IRP,40K(A)
ISAT,10%(A)
ISAT,30%(A)
RDC(mΩ)
fres(MHz)
Material
Muster
WE-HCI SMT-Hochstrominduktivität, 1.5 µH, 13.8 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität1.5 µH
Performance Nennstrom13.8 A
Sättigungsstrom 14.5 A
Sättigungsstrom @ 30%14 A
Gleichstromwiderstand6.6 mΩ
Eigenresonanzfrequenz72 MHz
MaterialSuperflux 
WE-HCI SMT-Hochstrominduktivität, 1.8 µH, 22.1 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität1.8 µH
Performance Nennstrom22.1 A
Sättigungsstrom 17 A
Sättigungsstrom @ 30%18 A
Gleichstromwiderstand3.5 mΩ
Eigenresonanzfrequenz70 MHz
MaterialSuperflux 
WE-HCI SMT-Hochstrominduktivität, 2.2 µH, 10.2 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität2.2 µH
Performance Nennstrom10.2 A
Sättigungsstrom 15.6 A
Sättigungsstrom @ 30%13 A
Gleichstromwiderstand11.4 mΩ
Eigenresonanzfrequenz52 MHz
MaterialSuperflux