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Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 3.3 V |
| Ausgang 1 | 1.8 V / 15 A |
| IC-Revision | 1 |
Eigenschaften
Remarks:-Only BOM and Schematic is available.
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | Material | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCI SMT-Hochstrominduktivität, 0.72 µH, 37.8 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität0.72 µH | Performance Nennstrom37.8 A | Sättigungsstrom 114 A | Sättigungsstrom @ 30%35 A | Gleichstromwiderstand1.3 mΩ | Eigenresonanzfrequenz115 MHz | MaterialSuperflux |