IC-Hersteller Onsemi
IC-Hersteller (103)
- Alle Hersteller
Analog Devices
Infineon Technologies
Microchip
Onsemi
Renesas
ROHM
STMicroelectronics
Texas Instruments
- 3peak incorporated (28)
- Ablic (23)
- Acco Semiconductor (1)
- Advanced Power (4)
- Allegro Microsystems (100)
- Alpha & Omega Semiconductor (37)
- AnalogySemi (3)
- AnDAPT Inc (204)
- Anpec (13)
- AXElite (2)
- Backward (6)
- Bright Power Semiconductor (1)
- Broadcom (46)
- Cambridge GaN Devices (18)
- Chipanalog Micro (10)
- Cologne Chips (1)
- Convenient Power (1)
- Dialog Semiconductor (12)
- Diodes Incorporated (259)
- Divimath (8)
- Elmos AG (1)
- EPC (140)
- e-Peas Semiconductors (1)
- Eta Solutions Co. Ltd. (9)
- GaN Systems (8)
- GaNPower (3)
- Giantec (1)
- Gstek Wuxi (1)
- Helix Semiconductor (7)
- IKON (1)
- Indie Semiconductor (8)
- Innovision Semiconductor Inc (2)
- Intel (68)
- Inventchip Technology (3)
- ISSI (51)
- JoulWatt (20)
- KDPOF (3)
- Kinetic Technology (8)
- Lattice semiconductor Corporation (38)
- Littelfuse (1)
- Lumissil Microsystems (8)
- M3 Technology (M3Tek) (7)
- Macnica (22)
- Marvell Semiconductor (1)
- MaxLinear (181)
- Menlo Micro (1)
- MikroE (25)
- MindCet (2)
- Monolithic Power Systems (980)
- Navitas Semiconductor Inc (6)
- NewEdge Technologies, Inc. (1)
- Nexperia (267)
- Nisshinbo Micro Device Inc. (10)
- Novosense Micro (1)
- NXP (337)
- O2 Micro International Ltd (10)
- On Bright (7)
- Panasonic (2)
- PN Junction Semiconductor (2)
- Power Integrations (117)
- Powermat (1)
- Pulsiv (19)
- Qorvo (97)
- Realsil SuRealsil(tek) Microelectronics (1)
- Richtek (297)
- Sanken Electric Co., Ltd. (16)
- Sckipio (6)
- Semtech (86)
- SG-Micro (58)
- SiFive (2)
- Silanna Semiconductor (9)
- Silergy Corporation (33)
- Silicon Laboratory Inc. (108)
- Silicontent Technology (59)
- Silvertel (59)
- Skycore Semiconductors (1)
- Skyworks (33)
- Southchip (14)
- Summit Wireless (1)
- Tagore Tech (7)
- Taiwan Semiconductor (1)
- TDK Corporation (1)
- Tempo Semiconductor (1)
- Torex (37)
- Toshiba (25)
- Transphorm (21)
- TransSIP (2)
- Union (21)
- uPI Semiconductor (2)
- Valens Semiconductor (31)
- Wise Integration (3)
- Wolfspeed (23)
- Xilinx (22)
- XL Semiconductor (3)
- XYSemi (62)
Details
| Topologie | Leistungsfaktor-Korrektur |
| Eingangsspannung | 90 V |
| Ausgang 1 | 390 V |
| IC-Revision | 1 |
Beschreibung
The NCP1631 integrates a dual MOSFET driver for interleaved PFC applications. Interleaving consists of paralleling two small stages in lieu of a bigger one, more difficult to design. This approach has several merits like the ease of implementation, the use of smaller components or a better distribution of the heating. Also, Interleaving extends the power range of Critical Conduction Mode that is an efficient and cost−effective technique (no need for low trr diodes). In addition, the NCP1631 drivers are 180° phase shift for a significantly reduced current ripple. Housed in a SOIC16 package, the circuit incorporates all the features necessary for building robust and compact interleaved PFC stages, with a minimum of external components.
Eigenschaften
- Near−Unity Power Factor
- Substantial 180° Phase Shift in All Conditions Including TransientPhases
- Frequency Clamped Critical Conduction Mode (FCCrM) i.e.,Fixed Frequency, Discontinuous Conduction Mode Operation withCritical Conduction Achievable in Most Stressful Conditions
- FCCrM Operation Optimizes the PFC Stage Efficiency Over theLoad Range
- Out−of−phase Control for Low EMI and a Reduced rms Current inthe Bulk Capacitor
- Frequency Fold−back at Low Power to Further Improve the LightLoad Efficiency
- Accurate Zero Current Detection by Auxiliary Winding for ValleyTurn On
- Fast Line / Load Transient Compensation
- High Drive Capability: −500 mA / +800 mA
- Signal to Indicate that the PFC is Ready for Operation (“pfcOK”Pin)
- VCC Range: from 10 V to 20 VSafety Features
- Output Over and Under Voltage Protection
- Brown−Out Detection with a 50−ms Delay to Help Meet Hold−up Time Specifications
- Soft−Start for Smooth Start−up Operation
- Programmable Adjustment of the Maximum Power
- Over Current Limitation
- Detection of Inrush Currents
Typische Anwendungen
- LCD / Plasma Flat Panels
- All Off Line Appliances Requiring Power Factor
- Computer Power Supplies
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | Pins | PCB/Kabel/Panel | Modularity | Typ | ISAT(A) | fres(MHz) | IR(A) | L(mH) | RDC max.(mΩ) | VR(V (AC)) | VT(V (AC)) | Material | L(mm) | B(mm) | H(mm) | Montageart | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WR-TBL Serie 3137 - 5.00 mm Close Horizontal PCB Header, 3, Steckbar | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | Pins3 | PCB/Kabel/PanelPCB | ModularityNein | TypHorizontal | – | – | Nennstrom20 A | – | – | – | – | – | Länge17 mm | – | – | MontageartTHT | ||||
 | WE-CMB Stromkompensierte Netzdrossel, 4, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-CMB Stromkompensierte Netzdrossel | Pins4 | – | – | – | – | – | Nennstrom6 A | Induktivität2.2 mH | Gleichstromwiderstand20 mΩ | Nennspannung250 V (AC) | Prüfspannung1500 V (AC) | MaterialMnZn | Länge27.5 mm | Breite18.5 mm | Höhe33 mm | MontageartTHT | ||||
 | WE-FI Funkentstördrossel, –, – | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-FI Funkentstördrossel | – | – | – | – | – | – | Nennstrom6.1 A | Induktivität0.15 mH | Gleichstromwiderstand45 mΩ | – | – | – | Länge27.5 mm | Breite13.6 mm | – | MontageartTHT | |||
 | WE-TIS Tonneninduktivität, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-TIS Tonneninduktivität | – | – | – | – | Sättigungsstrom0.4 A | Eigenresonanzfrequenz2.3 MHz | Nennstrom0.6 A | Induktivität0.47 mH | Gleichstromwiderstand1300 mΩ | – | – | MaterialNiZn | Länge7.8 mm | Breite7.8 mm | Höhe7.5 mm | MontageartTHT | ||||
| WE-TIS Tonneninduktivität, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-TIS Tonneninduktivität | – | – | – | – | Sättigungsstrom0.25 A | Eigenresonanzfrequenz1.7 MHz | Nennstrom0.35 A | Induktivität1 mH | Gleichstromwiderstand2300 mΩ | – | – | MaterialNiZn | Länge7.8 mm | Breite7.8 mm | Höhe7.5 mm | MontageartTHT | ||||
750314724 | Power Inductor, –, – | Simulation– | Downloads– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | Produktserie Power Inductor | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – |