IC-Hersteller Monolithic Power Systems
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Details
| Topologie | Sonstige Topologie |
| IC-Revision | 00B |
Typische Anwendungen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | Material | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCI SMT-Hochstrominduktivität, 4.7 µH, 6 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität4.7 µH | Performance Nennstrom6 A | Sättigungsstrom 12.5 A | Sättigungsstrom @ 30%4.7 A | Gleichstromwiderstand24.5 mΩ | Eigenresonanzfrequenz57 MHz | MaterialSuperflux |