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Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 6.5-20 V |
| Schaltfrequenz | 300-1500 kHz |
| Ausgang 1 | 5.1 V / 8 A |
| IC-Revision | 1.2.2 |
Beschreibung
TheXRP7708 and XRP7740 arequad-output pulse-widthmodulated(PWM) step-downDCDC controllerswithabuilt-inLDOforstandby power and GPIOs. The devices provide a completepowermanagementsolutioninone IC and are fully programmable via an I2C serial interface. Independent Digital PulseWidth Modulator(DPWM) channels regulate output voltages and provide all required protection functionssuch ascurrentlimiting and over voltageprotection. Each output voltagecanbeprogrammedfrom 0.9Vto5.1V withouttheneedofanexternal voltage divider. The wide range of theprogrammable DPWM switching frequency (from 300 KHzto1.5 MHz) enablestheuserto optimize between efficiency and component size. Input voltagerangeisfrom 6.5Vto20V. An I2C businterfaceisprovidedtoprogramtheIC aswellastocommunicatewiththehost for fault reporting and handling,powerrail parametersmonitoring,etc.Thedeviceoffersacompletesolutionforsoftstartand soft-stop. The start-up delay and ramp of each PWM regulator can be independently controlled. Thedevicecanstart upapre-biasedPWM channelwithoutcausinglarge negative inductorcurrent
Eigenschaften
- 4 Channel Step Down Controller
- 3ohm/1.8ohm driver–XRP7740
- 5ohm/1.8ohm driver–XRP7708
- Programmable utput Voltage 0.9V-5.1V
- Programmable 1.5MHz PWM Frequency6.5V-20V Single Input Voltage RangeUp to 6 Reconfigurable GPIO PinsFully Programmable via I2C InterfaceIndependent Digital Pulse Width
- Modulator (DPWM) channelsComplete Monitoring and ReportingComplete Power Up/Down SequencingFull On Board Protection
- OTP, UVLO, OCP and OVPBuilt-in 3.3V/5V LDOPowerArchitect™ Design SoftwareGreen/Halogen Free 40-pin TQFN
Typische Anwendungen
- Processors & DSPs Based Equipment
- Industrial & Telecom Equipment
- Audio-Video Equipment
- Multi Channel Programmable Power Supplies
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | Material | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCI SMT-Hochstrominduktivität, 1.3 µH, 32.1 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität1.3 µH | Performance Nennstrom32.1 A | Sättigungsstrom 111 A | Sättigungsstrom @ 30%25 A | Gleichstromwiderstand1.8 mΩ | Eigenresonanzfrequenz59 MHz | MaterialWE-PERM | ||||
| WE-HCI SMT-Hochstrominduktivität, 2 µH, 8.7 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität2 µH | Performance Nennstrom8.7 A | Sättigungsstrom 13 A | Sättigungsstrom @ 30%9 A | Gleichstromwiderstand14.2 mΩ | Eigenresonanzfrequenz58 MHz | MaterialSuperflux | ||||
| WE-HCI SMT-Hochstrominduktivität, 4.9 µH, 8.3 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität4.9 µH | Performance Nennstrom8.3 A | Sättigungsstrom 12.2 A | Sättigungsstrom @ 30%6.5 A | Gleichstromwiderstand14.5 mΩ | Eigenresonanzfrequenz56 MHz | MaterialSuperflux |