Infineon Technologies 1EDC20I12MH

Beschreibung

The two reference boards are designed as daughter boards to fit the 1200 V CoolSiCTM MOSFET in TO-247 3-/4-pin evaluation platform. By installing the reference daughter board (hereafter called ‘daughter board’) on the evaluation platform (hereafter called ‘main board’), the user can do a double pulse test to evaluate the performance of the CoolSiCTM MOSFET and coreless isolated gate drivers.

Eigenschaften

• Both daughter boards utilize insulated metal substrate (IMS), which provides an excellent thermalconduction capability.
• All the components are surface mounted devices (SMD) due to the IMS board type.
• Creepage is at least 4 mm to ensure the safe operation under 800 VDC bus voltage.

Typische Anwendungen

• ndustrial heating and welding
• Power Management (SMPS)-Reference Design
• Solutions for solar energy systems

Weiterführende Informationen

• Datenblatt
• Produktseite des IC-Herstellers