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GaNPower GPIHV10DK | Demoboard GPI-HV-ACDC-QR-1.11-02
N-channel 1200V10AGaNPower HEMT in TO252 Package
Details
| Topologie | Sperrwandler |
| Eingangsspannung | 200-500 V |
| IC-Revision | 1 |
Beschreibung
These devices are N-channel 1200 V Power GaN HEMTs based on proprietary E-mode GaN on silicontechnology. The resulting product has extremely low on state resistance, very low input capacitance and zeroreverse recovery charge making it especially suitable for applications which require superior power density,ultra-high switching frequency and outstanding efficiency.
Eigenschaften
Ultra-low RDS(on) High dv/dt capability Extremely low inputcapacitance ZeroQrr Outstanding switching performance Low Profile
Typische Anwendungen
- Switching Power Applications, EVOBC and DC-DC Converters