| Topologie | Gegentaktwandler (Vollbrücken) |
| Eingangsspannung | 85-240 V |
| Schaltfrequenz | 350-580 kHz |
| Ausgang 1 | 48 V / 5 A |
| IC-Revision | 1.0 |
EPC9153: 44–60 V Input, 12-20 V, 12.5 A Output up to 250 W High Efficiency, Thin Power Module for high performance computing systems.The EPC9153 demonstration board is a 60 V maximum input voltage, 12.5 A maximum output current, 12 - 20 V output voltage, thin synchronous buck converter.The EPC9153 features a GaN power stage using the EPC2218 and EPC2038 eGaN® FETs. The uP1966E gate driver that features high driving strength is used to drive the FETs. The synchronous bootstrap circuit ensures 4.9 V gate voltage is used for the high-side gate drive. Digital control that allows sub-10 ns dead-time and flexibility in control scheme development is employed. In order to optimize the efficiency, two small on-board switch-mode power supply circuits are used to generate the housekeeping 5 V and 3.1 V voltages for the gate driver and the digital controller respectively.
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | IR(A) | L(µH) | RDC max.(mΩ) | VR(V (AC)) | VT(V (AC)) | Material | L(mm) | B(mm) | H(mm) | Montageart | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | WE-CMB NiZn Stromkompensierte Netzdrossel, 3 A, 30 µH | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-CMB NiZn Stromkompensierte Netzdrossel | Nennstrom3 A | Induktivität30 µH | Gleichstromwiderstand26 mΩ | Nennspannung250 V (AC) | Prüfspannung1500 V (AC) | MaterialNiZn | Länge16 mm | Breite7.5 mm | Höhe17.5 mm | MontageartTHT |