IC-Hersteller EPC

IC-Hersteller (103)

EPC NCP43080 | Demoboard EPC9171

EPC9153 – 250 W High Efficiency, Thin Power Module

Details

TopologieAbwärtswandler
Eingangsspannung48 V
Schaltfrequenz350-580 kHz
Ausgang 148 V / 5 A
IC-Revision1.0

Beschreibung

EPC9153: 44–60 V Input, 12-20 V, 12.5 A Output up to 250 W High Efficiency, Thin Power Module for high performance computing systems.The EPC9153 demonstration board is a 60 V maximum input voltage, 12.5 A maximum output current, 12 - 20 V output voltage, thin synchronous buck converter.The EPC9153 features a GaN power stage using the EPC2218 and EPC2038 eGaN® FETs. The uP1966E gate driver that features high driving strength is used to drive the FETs. The synchronous bootstrap circuit ensures 4.9 V gate voltage is used for the high-side gate drive. Digital control that allows sub-10 ns dead-time and flexibility in control scheme development is employed. In order to optimize the efficiency, two small on-board switch-mode power supply circuits are used to generate the housekeeping 5 V and 3.1 V voltages for the gate driver and the digital controller respectively.

Eigenschaften

  • 44 – 60 VIN to 12 – 20 VOUT
  • Constant switching frequency = 400 kHz-
  • Max component height = 6.5 mm
  • Temperature rise: < 40 °C @ 20 V with 12.5 A output
  • High efficiency = 98.2% @ 20 V/12.5 A output

Typische Anwendungen

  • High Performance Computing – computers, displays, thin consumer electronics

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
L(µH)
IRP,40K(A)
ISAT,10%(A)
ISAT,30%(A)
RDC(mΩ)
fres(MHz)
Material
Muster
WE-HCI SMT-Hochstrominduktivität, 0.33 µH, 25.5 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität0.33 µH
Performance Nennstrom25.5 A
Sättigungsstrom 19.5 A
Sättigungsstrom @ 30%20 A
Gleichstromwiderstand1.75 mΩ
Eigenresonanzfrequenz402 MHz
MaterialSuperflux