IC-Hersteller Diodes Incorporated
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Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 24-60 V |
| Ausgang 1 | 5 V / 3.5 A |
| IC-Revision | Rev. 1 |
Typische Anwendungen
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | Material | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCI SMT-Hochstrominduktivität, 10 µH, 9.5 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität10 µH | Performance Nennstrom9.5 A | Sättigungsstrom 14 A | Sättigungsstrom @ 30%8.5 A | Gleichstromwiderstand16.3 mΩ | Eigenresonanzfrequenz21 MHz | MaterialSuperflux |