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Cambridge GaN Devices CGD65A130SH2 | Demoboard CGD-ASYEVB02301-01 / CGD-UG2202
Two CGD ICeGaN Devices Driven by Standard MOSFET Drivers With Variable Gate Drive Voltage
Details
| Topologie | Gegentaktwandler (Halbbrücken) |
| Eingangsspannung | 0-18 V |
| Ausgang 1 | 650 V |
| IC-Revision | 1 |
Beschreibung
The Half Bridge Evaluation Board allows ICeGaN variants to be used with a readily available silicon MOSFET driver, demonstrating state of the art performance combined with easy implementation of ICeGaN into an existing design.This evaluation board is available in a number of variants with matched high side & low side devices, with either 55mΩ, 130mΩ 5x6, 130mΩ 8x8, 200mΩ 5x6 or 240mΩ 5x6 650 V GaN HEMTs and variable gate drive voltage from 9 V to 20 V.All board functionality is identical for all variants.
Eigenschaften
- 2 x 650 V CGD Enhancement Mode GaN HEMTs with ICeGaN™ Gate
- 2 x Silicon Labs SI8271AB-IS Isolated Gate Driver (1 per side), adjustable drive amplitude 9-20 V
Typische Anwendungen
- LED lighting
- SMPS applications
- PSUs, Industrial SMPS and inverters
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Downloads | Status | Produktserie | Pins | Typ | Montageart | L(mm) | IR(A) | Arbeitsspannung(V (AC)) | Betriebstemperatur | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WR-PHD Stiftleisten - Zweireihig, 4, Gerade | Downloads7 Dateien | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWR-PHD Stiftleisten - Zweireihig | Pins4 | TypGerade | MontageartSMT | Länge5.08 mm | Nennstrom3 A | Arbeitsspannung250 V (AC) | Betriebstemperatur -40 °C up to +105 °C |