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Details
| Topologie | Sonstige Topologie |
Typische Anwendungen
- Automotive Camera Applications
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC max.(mΩ) | Material | LR(µH) | fres(MHz) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCC SMT-Hochstrominduktivität, 1.5 µH, 21.7 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCC SMT-Hochstrominduktivität | Induktivität1.5 µH | Performance Nennstrom21.7 A | Sättigungsstrom 126.8 A | Sättigungsstrom @ 30%31 A | Gleichstromwiderstand4 mΩ | MaterialFerrite | Nenninduktivität1.45 µH | Eigenresonanzfrequenz78 MHz |