IC-Hersteller Analog Devices

IC-Hersteller (103)

Analog Devices MAX25221 | Demoboard MAX25221EVKIT

Automotive 4-Channel TFT-LCD Power Supply with VCOM buffer

Details

TopologieInverswandler
Eingangsspannung2.65-5.5 V
Schaltfrequenz420-2100 kHz
Ausgang 1-6.8 V / -0.2 A

Beschreibung

The MAX25221 evaluation kit (EV kit) is a fully assem¬bled and tested surface-mount PCB used to evalu¬ate MAX25221 automotive 4-Channel TFT-LCD Power Supply with VCOM Buffer and MAX25220 automotive 4-Channel TFT-LCD Power Supply without VCOM. Each output rail (AVDD, NAVDD, VGON, VGOFF and VCOM) can be independently adjusted via I2C. The EV kit demonstrates the device’s features: adjustable output voltage, fault protection, VCOM temperature compensation, and non-volatile memory programming. The EV kit exposes an I2C interface which can operate in conjunction with the MINIQUSB+ adapter or a third party I2C master like a general-purpose microcontroller. The EV kit also includes Windows®-compatible software that provides a simple graphical user interface (GUI) for exercising the features of the IC. The EV system includes both the EV kit and the MINIQUSB+ adapter board.

Eigenschaften

  • 2.65V to 5.5V Input Range
  • Default Output Voltages
  • 6.8V Output at 200mA (Boost Converter)
  • -6.8V Output at -200mA (Inverting Regulator)
  • 12V Output at 15mA (Positive-Charge Pump Regulator)
  • -10V Output at 15mA (Negative-Charge PumpRegulator)
  • -2.49V Output at 100mA (VCOM Buffer)
  • Selectable Switching Frequency (2.1MHz or 420kHz) with Spread-Spectrum Option. (The EV kit components will fit the 2.1MHz frequency. Using 420kHz will need hardware change.)
  • Dedicated GUI
  • Full Sequencing Flexibility
  • Proven PCB Layout
  • Fully Assembled and Tested

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
L(µH)
IRP,40K(A)
ISAT,10%(A)
ISAT,30%(A)
RDC max.(mΩ)
fres(MHz)
Montageart
Muster
WE-LHMI SMT Speicherdrossel, 2.2 µH, 4.05 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität2.2 µH
Performance Nennstrom4.05 A
Sättigungsstrom 14.45 A
Sättigungsstrom @ 30%8.4 A
Gleichstromwiderstand61 mΩ
Eigenresonanzfrequenz49 MHz
MontageartSMT 
WE-LHMI SMT Speicherdrossel, 10 µH, 3.75 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität10 µH
Performance Nennstrom3.75 A
Sättigungsstrom 15 A
Sättigungsstrom @ 30%9.8 A
Gleichstromwiderstand85 mΩ
Eigenresonanzfrequenz15 MHz
MontageartSMT