| Topologie | Abwärtswandler |
| Eingangsspannung | 4.5-60 V |
| Schaltfrequenz | 105-835 kHz |
| Ausgang 1 | 8.5 V / 3 A |
| IC-Revision | C |
The LTC®3892/LTC3892-1/LTC3892-2 is a high performancedual step-down DC/DC switching regulator controllerthat drives all N-channel synchronous power MOSFETstages. Power loss and noise are minimized by operatingthe two controller output stages out-of-phase.The gate drive voltage can be programmed from 5V to10V to allow the use of logic or standard-level FETs andto maximize efficiency. Internal switches in the top gatedrivers eliminate the need for external bootstrap diodes.A wide 4.5V to 60V input supply range encompasses a widerange of intermediate bus voltages and battery chemistries.Output voltages up to 99% of VIN can be regulated. OPTILOOP® compensation allows the transient response andloop stability to be optimized over a wide range of outputcapacitance and ESR values.The 29μA no-load quiescent current extends operating runtime in battery powered systems
Wide VIN Range: 4.5V to 60V (65V Abs Max)nn Wide Output Voltage Range: 0.8V ≤ VOUT ≤ 99% - VINnn Adjustable Gate Drive Level 5V to 10V (OPTI-DRIVE)nn No External Bootstrap Diodes Requirednn Low Operating IQ: 29μA (One Channel On)nn Selectable Gate Drive UVLO Thresholdsnn Out-of-Phase Operation Reduces Required InputCapacitance and Power Supply Induced Noisenn Phase-Lockable Frequency: 75kHz to 850kHznn Selectable Continuous, Pulse Skipping or Low RippleBurst Mode® Operation at Light Loadsnn Selectable Current Limit (LTC3892/LTC3892-2)nn Very Low Dropout Operation: 99% Duty Cyclenn Power Good Output Voltage Monitors (LTC3892/LTC3892-2)nn Low Shutdown IQ: 3.6μAnn Small 32-Lead 5mm × 5mm QFN Package (LTC3892/LTC3892-2) or TSSOP Package (LTC3892-1)
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | Material | Muster | |
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![]() | WE-HCI SMT-Hochstrominduktivität, 6.5 µH, 6.6 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität6.5 µH | Performance Nennstrom6.6 A | Sättigungsstrom 12 A | Sättigungsstrom @ 30%6 A | Gleichstromwiderstand21.5 mΩ | Eigenresonanzfrequenz50 MHz | MaterialSuperflux |