IC-Hersteller Analog Devices

IC-Hersteller (103)

Analog Devices LTC3838EFE | Demoboard DC1626A-B

DC1626A-B - LTC3838EFE Demo Board (RSENSE) |4.5V ≤ VIN ≤ 26V; VOUT1 = 1.2V @ 15A, VOUT2 = 1.5V @ 15A

Details

TopologieAbwärtswandler
Eingangsspannung4.5-26 V
Ausgang 11.5 V / 15 A
Ausgang 21.2 V / 15 A
IC-Revision2

Beschreibung

Demonstration circuit 1626A is a dual output 1.5V/15A and 1.2V/15A synchronous buck converter operating with a switching frequency of 300kHz over an input voltage range of 4.5V to 26V. The demo board comes in two versions. The -A version uses inductor DCR current sensingwith an iron powder inductor for high efficiency. The -B version uses a 2.5mΩ sense resistor for accurate current sensing with a low DCR ferrite inductor. The fixed on-time valley current mode architecture of the LTC3838 allows for a fast load step response (see Figures 6 to 9). The loadstep response can be tested with the on-board load step circuit and a bench pulse generator.

The demo board uses a high density, two sided drop-in layout. The entire converter, excluding the bulk output and input capacitors, fits within a compact 1.5" × 1.0" area on the board. The package style for the LTC3838EFE is a 38-lead TSSOP with an exposed ground pad.

Eigenschaften

  • MODE jumper to program either DCM or FCM at light or no load
  • EXTVCC pin
  • PLLIN pin to synchronize the converter to an external clock
  • Remote sensing for VOUT1
  • Optional resistors to tie the two phases together
  • Each rail has its own RUN pin, PGOOD pin and TRACK/SS pin

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
L(µH)
IRP,40K(A)
ISAT,10%(A)
ISAT,30%(A)
RDC max.(mΩ)
Material
LR(µH)
fres(MHz)
Muster
WE-HCC SMT-Hochstrominduktivität, 0.68 µH, 27.2 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität0.68 µH
Performance Nennstrom27.2 A
Sättigungsstrom 141.4 A
Sättigungsstrom @ 30%46 A
Gleichstromwiderstand2.65 mΩ
MaterialFerrite 
Nenninduktivität0.67 µH
Eigenresonanzfrequenz140 MHz