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Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 3.3 V |
| Schaltfrequenz | 10000 kHz |
| Ausgang 1 | 0.8 V / 2 A |
| Ausgang 2 | 1.2 V / 2 A |
Beschreibung
The LTC®3315B features dual 2A monolithic synchronous step-down converters operating from a 2.25V to 5.5V input supply in one package for space-constrained applications with demanding performance requirements. Using constant frequency, peak current mode control at switching frequencies up to 10MHz with a minimum ontime as low as 25ns, both bucks achieve high efficiency and fast transient response in a very small application footprint.
Eigenschaften
- Dual Outputs Each with 2A Output Current
- High Efficiency: 19mΩ NMOS and 75mΩ PMOS
- Wide Bandwidth, Fast Transient Response
- Switching Frequency Synchronizable Up to 10MHz
- VIN Range: 2.25V to 5.5V
- VOUT Range: 0.5V to VIN
- VOUT Accuracy: }1%
- Low Ripple Burst ModeR Operation
- Peak Current Mode Control
- Minimum On-Time: 25ns
- Safely Tolerates Inductor Saturation in Overload
- Shutdown Current: 1.2μA
- Precision 400mV Enable Thresholds
- Internal Soft-Start and Compensation
- Power Good Output
- Low Profile, Thermally Enhanced 12-Lead 2mm × 2mm × 0.74mm LQFN Package
- AEC-Q100 Qualified for Automotive Applications
Typische Anwendungen
- Servers, Optical Networking, Communications
- Industrial
- Telecom Supplies, Distributed DC Power Systems (POL), FPGA, ASIC, μP Core Supplies
- Automotive
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IR(A) | ISAT1(A) | ISAT2(A) | RDC max.(mΩ) | fres(MHz) | ISAT(A) | RDC(mΩ) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-LQS SMT-Speicherdrossel, 0.16 µH, 3.7 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LQS SMT-Speicherdrossel | Induktivität0.16 µH | Nennstrom3.7 A | – | – | – | Eigenresonanzfrequenz644 MHz | Sättigungsstrom7 A | Gleichstromwiderstand16 mΩ | ||||
 | WE-PMCI Power Molded Chip Induktivität, 0.24 µH, 6.9 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PMCI Power Molded Chip Induktivität | Induktivität0.24 µH | Nennstrom6.9 A | Sättigungsstrom 12.8 A | Sättigungsstrom 26.7 A | Gleichstromwiderstand21 mΩ | Eigenresonanzfrequenz280 MHz | Sättigungsstrom5.4 A | – | ||||
| WE-LQS SMT-Speicherdrossel, 0.47 µH, 2.6 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LQS SMT-Speicherdrossel | Induktivität0.47 µH | Nennstrom2.6 A | – | – | – | Eigenresonanzfrequenz231 MHz | Sättigungsstrom5 A | Gleichstromwiderstand32 mΩ | ||||
| WE-PMCI Power Molded Chip Induktivität, 0.47 µH, 5.4 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PMCI Power Molded Chip Induktivität | Induktivität0.47 µH | Nennstrom5.4 A | Sättigungsstrom 12.95 A | Sättigungsstrom 26.3 A | Gleichstromwiderstand30 mΩ | Eigenresonanzfrequenz165 MHz | Sättigungsstrom4.2 A | – |