IC-Hersteller Analog Devices

IC-Hersteller (103)

Analog Devices LT8580 | Demoboard DC2518

Boost/SEPIC/Inverting DC/DC Converter with 1A, 65V Switch, Soft-Start and Synchronization

Details

TopologieSEPIC Buck-Boost Topologie
Eingangsspannung2.55-40 V
Schaltfrequenz1500 kHz
Ausgang 165 V / 1 A
IC-Revision1

Beschreibung

The LT8580 is a PWM DC/DC converter containing an internal 1A, 65V switch. The LT8580 can be configured as either a boost, SEPIC or inverting converter.The LT8580 has an adjustable oscillator, set by a resistor from the RT pin to ground. Additionally, the LT8580 can be synchronized to an external clock. The switching frequency of the part may be free running or synchronized, and can be set between 200kHz and 1.5MHz.The LT8580 also features innovative SHDN pin circuitry that allows for slowly varying input signals and an adjustable undervoltage lockout function.Additional features such as frequency foldback and soft-start are integrated. The LT8580 is available in tiny thermally enhanced 3mm × 3mm 8-lead DFN and 8-lead MSOP packages.

Eigenschaften

  • 1A, 65V Power Switch
  • Adjustable Switching Frequency
  • Single Feedback Resistor Sets VOUT
  • Synchronizable to External Clock
  • High Gain SHDN Pin Accepts Slowly Varying Input Signals
  • Wide Input Voltage Range: 2.55V to 40V
  • Low VCESAT Switch: 400mV at 0.75A (Typical)
  • Integrated Soft-Start Function
  • Easily Configurable as a Boost, SEPIC, or Inverting Converter
  • User Configurable Undervoltage Lockout (UVLO)
  • Pin Compatible with LT3580
  • Tiny Thermally Enhanced 8-Lead 3mm × 3mm DFN and 8-Lead MSOP Packages
  • AEC-Q100 Qualification in Progress

Typische Anwendungen

  • VFD Bias Supplies, TFT-LCD Bias Supplies, DPS Receivers, DSL Modems, Local Power Supply

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
L(µH)
IR(A)
ISAT(A)
RDC(mΩ)
fres(MHz)
Muster
WE-LQS SMT-Speicherdrossel, 47 µH, 0.6 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität47 µH
Nennstrom0.6 A
Sättigungsstrom0.7 A
Gleichstromwiderstand620 mΩ
Eigenresonanzfrequenz11 MHz
WE-LQS SMT-Speicherdrossel, 100 µH, 0.42 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität100 µH
Nennstrom0.42 A
Sättigungsstrom0.56 A
Gleichstromwiderstand1430 mΩ
Eigenresonanzfrequenz8 MHz