IC-Hersteller Analog Devices

IC-Hersteller (103)

Analog Devices LT8330

Low IQ Boost/SEPIC/Inverting Converter with 1A, 60V Switch

Details

TopologieSEPIC Buck-Boost Topologie
Eingangsspannung4-16 V
Schaltfrequenz1850-2150 kHz
Ausgang 15 V / 0.28 A
Ausgang 25 V / 0.38 A
Ausgang 35 V / 0.3 A
IC-Revision2016

Beschreibung

The LT®8330 is a current mode DC/DC converter capable of generating either positive or negative output voltages using a single feedback pin. It can be configured as a boost, SEPIC or inverting converter consuming as low as 6μA of quiescent current. Low ripple Burst Mode operation maintains high efficiency down to very low output currents while keeping the output ripple below 15mV in a typical application. The internally compensated current mode architecture results in stable operation over a wide range of input and output voltages. Integrated soft-start and frequency foldback functions are included to control inductor current during start-up. The 2MHz operation combined with small package options, enables low cost, area efficient solutions.

Eigenschaften

  • 3V to 40V Input Voltage Range
  • Ultralow Quiescent Current and Low Ripple Burst Mode® Operation: IQ = 6μA
  • 1A, 60V Power Switch
  • Positive or Negative Output Voltage Programming with a Single Feedback Pin
  • Fixed 2MHz Switching Frequency
  • Accurate 1.6V EN/UVLO Pin Threshold
  • Internal Compensation and Soft-Start
  • Low Profile (1mm) ThinSOT™ Package
  • Low Profile (0.75mm) 8-Lead (3mm × 2mm) DFN Package

Remarks

  • L1=L2=6.8 are used refer page no-18

Typische Anwendungen

  • Telecom
  • Portable Electronics
  • Industrial and Automotive
  • Medical Diagnostic Equipment

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
L1(µH)
L2(µH)
n
IR 1(A)
IR 2(A)
ISAT 1(A)
ISAT1(A)
ISAT2(A)
RDC1 typ(mΩ)
RDC2 typ(mΩ)
RDC1 max(mΩ)
RDC2 max(mΩ)
fres 1(MHz)
Muster
WE-TDC SMT-Doppeldrossel, 2.7 µH, 2.7 µH
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität 12.7 µH
Induktivität 22.7 µH
Übersetzungsverhältnis1:1 
Nennstrom 11.85 A
Nennstrom 21.85 A
Sättigungsstrom [1]3 A
Sättigungsstrom 13 A
Sättigungsstrom 23 A
Gleichstromwiderstand 169.5 mΩ
Gleichstromwiderstand 269.5 mΩ
Gleichstromwiderstand 180.5 mΩ
Gleichstromwiderstand 280.5 mΩ
Eigenresonanzfrequenz [1]65 MHz