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Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 4.5-15.5 V |
| Schaltfrequenz | 250-2000 kHz |
| IC-Revision | C |
Beschreibung
Wide input voltage range: 4.5 V to 15.5 V±1.5% output accuracy over full temperature range250 kHz to 2 MHz adjustable switching frequency withindividual ½× frequency optionPower regulationChannel 1 and Channel 2Programmable 2 A/4 A/6 A sync buck regulators withlow-side FET driversChannel 3 and Channel 4: 2.5 A sync buck regulatorsFlexible parallel operationSingle 12 A output (Channel 1 and Channel 2 in parallel)Single 5 A output (Channel 3 and Channel 4 in parallel)Low 1/f noise density40 μV rms at 0.8 VREF for 10 Hz to 100 kHzPrecision enable with 0.811 V accurate thresholdActive output discharge switchFPWM/PSM mode selectionFrequency synchronization input or outputPower-good flag for Channel 1 outputUVLO, OCP, and TSD protection48-lead, 7 mm × 7 mm LFCSP
Eigenschaften
Wide input voltage range: 4.5 V to 15.5 V±1.5% output accuracy over full temperature range250 kHz to 2 MHz adjustable switching frequency withindividual ½× frequency optionPower regulationChannel 1 and Channel 2Programmable 2 A/4 A/6 A sync buck regulators withlow-side FET driversChannel 3 and Channel 4: 2.5 A sync buck regulatorsFlexible parallel operationSingle 12 A output (Channel 1 and Channel 2 in parallel)Single 5 A output (Channel 3 and Channel 4 in parallel)Low 1/f noise density40 μV rms at 0.8 VREF for 10 Hz to 100 kHzPrecision enable with 0.811 V accurate thresholdActive output discharge switchFPWM/PSM mode selectionFrequency synchronization input or outputPower-good flag for Channel 1 outputUVLO, OCP, and TSD protection48-lead, 7 mm × 7 mm LFCSP−40°C to +125°C operational junctional temperature range
Typische Anwendungen
- FPGA and processor applications
- Medical applications
- ,Small cell base stations
- Security and surveillance
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | Material | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCI SMT-Hochstrominduktivität, 0.76 µH, 22.9 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität0.76 µH | Performance Nennstrom22.9 A | Sättigungsstrom 18 A | Sättigungsstrom @ 30%15 A | Gleichstromwiderstand2.25 mΩ | Eigenresonanzfrequenz200 MHz | MaterialSuperflux | ||||
| WE-HCI SMT-Hochstrominduktivität, 1.1 µH, 19.6 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität1.1 µH | Performance Nennstrom19.6 A | Sättigungsstrom 16 A | Sättigungsstrom @ 30%13 A | Gleichstromwiderstand3.15 mΩ | Eigenresonanzfrequenz135 MHz | MaterialSuperflux | ||||
| WE-HCI SMT-Hochstrominduktivität, 2 µH, 13.8 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität2 µH | Performance Nennstrom13.8 A | Sättigungsstrom 14.5 A | Sättigungsstrom @ 30%9 A | Gleichstromwiderstand5.85 mΩ | Eigenresonanzfrequenz68 MHz | MaterialSuperflux |