IC-Hersteller Analog Devices

IC-Hersteller (103)

Analog Devices ADL5324ARKZ | Demoboard EVAL-CN0551-EBZ

USB-Powered, 433.92 MHz RF Power Amplifier with Overtemperature Management

Details

TopologieSonstige Topologie

Beschreibung

The ADL5324 incorporates a dynamically adjustable biasing circuit that allows for the customization of OIP3 and P1dB performance from 3.3 V to 5 V, without the need for an external bias resistor. This feature gives the designer the ability to tailor driver amplifier performance to the specific needs of the design. This feature also creates the opportunity for dynamic biasing of the driver amplifier where a variable supply is used to allow for full 5 V biasing under large signal conditions, and then reduced supply voltage when signal levels are smaller and lower power consumption is desirable. This scalability reduces the need to evaluate and inventory multiple driver amplifiers for different output power requirements, from 25 dBm to 29 dBm output power levels.

Eigenschaften

  • +35 dB Gain
  • 433 MHz ISM Band Optimized
  • 50 Ohm Input and Output Impedance Matched
  • Over temperature Monitoring
  • Automatic Thermal Shutoff & Turn on

Typische Anwendungen

  • Intended for applications outside radio communications

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
Schutzart
Leiterplattendicke(mm)
Mittelkontakt
Betriebstemperatur
L(nH)
Tol. L
Testbedingung L
Qmin.
Testbedingung Q
RDC max.(Ω)
IR(mA)
fres(MHz)
MusterVerfügbarkeit & Muster
SPECWR-SMA PCB End Launch, None, 1.6 mm
Simu­lation
Verfügbarkeit
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
SchutzartNone 
Leiterplattendicke1.6 mm
MittelkontaktØ 0.51 WIDE x 0.25 THK 
Betriebstemperatur -65 °C up to +165 °C
Verfügbarkeit prüfen
SPECWE-KI Keramik-SMT-Induktivität, –, –
Simu­lation
Verfügbarkeit
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Betriebstemperatur -40 °C up to +125 °C
Induktivität5.6 nH
Induktivität±0.2nH 
Induktivität250 MHz 
Güte23 
Güte250 MHz 
Gleichstromwiderstand0.083 Ω
Nennstrom760 mA
Eigenresonanzfrequenz5800 MHz
Verfügbarkeit prüfen