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IC manufacturers Transphorm

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Transphorm TPH3206PSB | Demoboard TDINV 3 000 W 0 5 0

650V 150mΩ GaN FET in TO-220

Overview

TopologyPower Factor Correction
Input voltage0-400 V
Output 11000 V
IC revision2.0

Description

The TDINV1000P100 1kW inverter evaluation kit provides an easy way to evaluate the performance advantages of GaN FETs in various inverter applications, such as solar and UPS. The kit provides the main features of a single-phase inverter in a proven, functional configuration, operating at or above 100kHz. At the core of the inverter are four 150mΩ GaN FETs configured as a full bridge and includes flexible microcontroller options. The TDINV1000P100-KIT is for evaluation purposes only.

Features

  • JEDEC qualified GaN technology
  • Dynamic RDS(on)eff production tested
  • Robust design, defined by
  • Intrinsic lifetime tests
  • Wide gate safety margin
  • Transient over-voltage capability
  • Very low QRR
  • Reduced crossover loss
  • RoHS-compliant and Halogen-free packaging

Typical applications

  • Datacom
  • Broad industrial
  • Servo motor
  • PV inverter

Products

Order Code Data­sheet Simu­lation Downloads Product seriesCTol. CVR
(V (DC))
SizeOperating TemperatureQ
(MHz)
RISOCeramic TypeL
(mm)
W
(mm)
H
(mm)
Fl
(mm)
Technical Reference Samples
885012006008SPEC
6 files WCAP-CSGP MLCCs 10 V(DC)100 pF ±5% 10 0603 -55 up to +125 °C 100010 GΩ NP0 Class I 1.6 0.8 0.8 0.4 NP00603101J010DFCT10000
885012008014SPEC
6 files WCAP-CSGP MLCCs 16 V(DC)220 pF ±5% 16 1206 -55 up to +125 °C 100010 GΩ NP0 Class I 3.2 1.6 0.8 0.6 NP01206221J016DFCT10000
Order Code Data­sheet Simu­lation
885012006008SPEC
885012008014SPEC
Samples
Order Code Data­sheet Simu­lation Downloads Product seriesCTol. CVR
(V (DC))
SizeOperating TemperatureQ
(MHz)
RISOCeramic TypeL
(mm)
W
(mm)
H
(mm)
Fl
(mm)
Technical Reference Samples