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Onsemi AND90082/D
Performance Comparison of1200 V SiC MOSFET and SiIGBT Used in PowerIntegrated Module for1100 V Solar Boost Stage
Overview
| Topology | Other Topology |
| Switching frequency | 16-40 kHz |
Description
This application note compares the performance of two power integrated modules (PIMs) in the boost stage of an 1100 V solar inverter. One PIM used state−of−the−art silicon 1200 V IGBT (part number NXH100B120H3Q0 [1]) defined as PIM−IGBT and the other PIM used a new 1200 V SiC MOSFET (part number NXH40B120MNQ0 [2]) defined as PIM−SIC. These two PIMs utilized the same Q0 package technology and SiC Schottky boost diode. They are pin−to−pin compatible allowing customers to upgrade from Si IGBT to the SiC MOSFET version. Due to faster switching characteristics of the SiC device, this paper explains gate driver and PCB layout topics which must be considered when using fast switching devices like SiC MOSFETs.
More information
Products
Order Code | Datasheet | Simulation | Downloads | Status | Product series | C | VR(V (DC)) | VR 2(V (DC)) | dV/dt(V/µs) | DF @ 1 kHz(%) | RISO | Pitch(mm) | L(mm) | W(mm) | H(mm) | Packaging | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WCAP-FTBE Film Capacitors, 470 nF, 1000 V (DC) | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWCAP-FTBE Film Capacitors | Capacitance470 nF | Rated Voltage1000 V (DC) | Rated Voltage 2800 V (DC) | Rate of Voltage Rise22 V/µs | Dissipation Factor1 % | Insulation Resistance6.38 GΩ | Pitch27.5 mm | Length31 mm | Width11 mm | Height20 mm | PackagingCarton |