| Topology | Buck Converter |
| Input voltage | 8-19 V |
| Output 1 | 1.2 V / 18 A |
Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
-Ultra High Efficiency
-Ultra Low RDS(on)
Ultra low QG
-Ultra small footprint
Order Code | Datasheet | Simulation | Downloads | Status | Product series | L(nH) | LR(nH) | IR(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | Material | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | WE-HCM SMT High Current Flat Wire Inductor, 220 nH, 180 nH | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-HCM SMT High Current Flat Wire Inductor | Inductance220 nH | Rated Inductance180 nH | Rated Current31 A | Saturation Current @ 10%27 A | Saturation Current @ 30%34.5 A | DC Resistance0.325 mΩ | Self Resonant Frequency80 MHz | MaterialMnZn |