IC manufacturers EPC

IC manufacturers (103)

EPC EPC2015

Enhancement Mode Power Transistor

Overview

TopologyBuck Converter
Input voltage8-19 V
Output 11.2 V / 18 A

Description

Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.

Features

-Ultra High Efficiency

-Ultra Low RDS(on)

  • Ultra low QG

    -Ultra small footprint

Typical applications

  • C conversion
  • High Speed DC-DC conversion
  • Hard Switched and High Frequency Circuits

Products

Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
L(nH)
LR(nH)
IR(A)
ISAT,10%(A)
ISAT,30%(A)
RDC(mΩ)
fres(MHz)
Material
Samples
WE-HCM SMT High Current Flat Wire Inductor, 220 nH, 180 nH
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance220 nH
Rated Inductance180 nH
Rated Current31 A
Saturation Current @ 10%27 A
Saturation Current @ 30%34.5 A
DC Resistance0.325 mΩ
Self Resonant Frequency80 MHz
MaterialMnZn