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EPC EPC1007

Enhancement Mode Power Transistor

Overview

TopologyBuck Converter
Output 1100 V / 6 A

Description

Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.

Features

  • Ultra High Efficiency
  • Ultra Low RDS(on)
  • Ultra low QG
  • Ultra small footprint

Typical applications

  • High Speed DC-DC conversion
  • Class D Audio
  • Hard Switched and High Frequency Circuits

Products

Order Code Data­sheet Downloads Product seriesL
(µH)
IR
(A)
ISAT
(A)
RDC max.
(mΩ)
RDC typ.
(mΩ)
MaterialLR
(µH)
fres
(MHz)
Samples
7443340100
STE ALT EAG CAD LTS PSP SPE IGS CADWE-HCC SMT High Current Cube Inductor 1 17 24 3.9 3.6 Ferrite 0.97 147
7443320220
STE ALT EAG CAD LTS PSP SPE IGS CADWE-HCC SMT High Current Cube Inductor 2.2 18 23 4.3 3.9 Ferrite 2 64
Order Code Data­sheet
7443340100
7443320220
Samples
Order Code Data­sheet Downloads Product seriesL
(µH)
IR
(A)
ISAT
(A)
RDC max.
(mΩ)
RDC typ.
(mΩ)
MaterialLR
(µH)
fres
(MHz)
Samples