IC manufacturers EPC

IC manufacturers (103)

EPC EPC1007

Enhancement Mode Power Transistor

Overview

TopologyBuck Converter
Output 1100 V / 6 A

Description

Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.

Features

  • Ultra High Efficiency
  • Ultra Low RDS(on)
  • Ultra low QG
  • Ultra small footprint

Typical applications

  • Hard Switched and High Frequency Circuits
  • Class D Audio
  • High Speed DC-DC conversion

Products

Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
L(µH)
IRP,40K(A)
ISAT,10%(A)
ISAT,30%(A)
RDC max.(mΩ)
Material
LR(µH)
fres(MHz)
Samples
WE-HCC SMT High Current Cube Inductor, 1 µH, 18.8 A
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance1 µH
Performance Rated Current18.8 A
Saturation Current @ 10%22.9 A
Saturation Current @ 30%25.1 A
DC Resistance3.9 mΩ
MaterialFerrite 
Rated Inductance0.97 µH
Self Resonant Frequency147 MHz
WE-HCC SMT High Current Cube Inductor, 2.2 µH, 21.6 A
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance2.2 µH
Performance Rated Current21.6 A
Saturation Current @ 10%24.8 A
Saturation Current @ 30%27.2 A
DC Resistance4.3 mΩ
MaterialFerrite 
Rated Inductance2 µH
Self Resonant Frequency64 MHz