| Topology | Buck Converter |
| Output 1 | 100 V / 6 A |
Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Order Code | Datasheet | Simulation | Downloads | Status | Product series | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC max.(mΩ) | Material | LR(µH) | fres(MHz) | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | WE-HCC SMT High Current Cube Inductor, 1 µH, 18.8 A | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-HCC SMT High Current Cube Inductor | Inductance1 µH | Performance Rated Current18.8 A | Saturation Current @ 10%22.9 A | Saturation Current @ 30%25.1 A | DC Resistance3.9 mΩ | MaterialFerrite | Rated Inductance0.97 µH | Self Resonant Frequency147 MHz | ||||
![]() | WE-HCC SMT High Current Cube Inductor, 2.2 µH, 21.6 A | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-HCC SMT High Current Cube Inductor | Inductance2.2 µH | Performance Rated Current21.6 A | Saturation Current @ 10%24.8 A | Saturation Current @ 30%27.2 A | DC Resistance4.3 mΩ | MaterialFerrite | Rated Inductance2 µH | Self Resonant Frequency64 MHz |